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In the context of the energy crisis, the optimal utilization of clean agricultural waste is of growing significance. This study employs a cost-effective method to obtain high-purity amorphous bio-based silica (RHA-SiO2) from rice husk ash (RHA) post pyrolysis. Leveraging the Taguchi method and response surface method (RSM) for the first time, this research utilizes pyrolysis and torrefaction temperatures as key determinants for the RHA-SiO2 particle size. Through an L36 (22 × 32) orthogonal test, key influencing factors were recognized. Subsequent optimization employed the central composite sequential (CCC) analysis, resulting in an interaction model that was experimentally validated with 96% to 99% accuracy. Such advanced techniques allow for a greater accuracy to be achieved in RHA-SiO2 extraction systems. [ABSTRACT FROM AUTHOR]

Resin-based friction materials (RBFMs) strengthened by polyether ether ketone (PEEK) fiber were designed and prepared in this study. Specimens incorporating PEEK fiber of 2–8 wt.% were fabricated based on wet granulation, and then the effects of the PEEK fiber content on the mechanical and tribological properties of RBFMs were systematically investigated. The results showed that PEEK fiber can sense the braking temperature and then effectively regulate the comprehensive properties of RBFMs. The specimen incorporating 6 wt.% PEEK fiber obtained the optimal comprehensive performance with a stable friction coefficient (COF), excellent fade resistance and recovery properties, and better wear resistance. The worn surface was inspected using a scanning electron microscope. After the friction–wear test, the specimen with 6 wt.% PEEK fiber presented a number of primary and secondary plateaus and a reduced number of pits with wear debris on the worn surface. The study indicated that PEEK fiber could not only enhance the mechanical and tribological properties of RBFMs at low temperatures because of their high strength and self-lubrication but also adhere to wear debris to reduce abrasive wear at high temperatures; furthermore, the adhered wear debris could form a secondary plateau under normal pressure, which could alleviate abrasion. [ABSTRACT FROM AUTHOR]

Under the conditions of conservation tillage, the existence of the root–soil complex greatly increases the resistance and energy consumption of stubble-cutting blades, especially in Northeast China. In this research, the corn root–soil complex in Northeast China was selected as the research object. Based on the multi-toothed structure of the leaf-cutting ant's mandibles and the unique bite mode of its mandibles on leaves, a gear-tooth, double-disk, bionic stubble-cutting device (BSCD) was developed by using a combination of power cutting and passive cutting. The effects of rotary speed, tillage depth, and forward speed on the torque and power of the BSCD were analyzed using orthogonal tests, and the results showed that all of the factors had a large influence on the torque and power, in the order of tillage depth > rotary speed > forward speed. The performance of the BSCD and the traditional power straight blade (TPSB) was explored using comparative tests. It was found that the optimal stubble-cutting rate of the BSCD was 97.4%. Compared with the TPSB, the torque of the BSCD was reduced by 15.2–16.4%, and the power was reduced by 9.2–11.3%. The excellent performance of the BSCD was due to the multi-toothed structure of the cutting edge and the cutting mode. [ABSTRACT FROM AUTHOR]

Resin-based friction materials (RBFM) are widely used in the fields of automobiles, agriculture machinery and engineering machinery, and they are vital for safe and stable operation. In this paper, polymer ether ketone (PEEK) fibers were added to RBFM to enhance its tribological properties. Specimens were fabricated by wet granulation and hot-pressing. The relationship between intelligent reinforcement PEEK fibers and tribological behaviors was investigated by a JF150F-II constant-speed tester according to GB/T 5763-2008, and the worn surface morphology was observed using an EVO-18 scanning electron microscope. The results showed that PEEK fibers can efficiently enhance the tribological properties of RBFM. A specimen with 6 ωt% PEEK fibers obtained the optimal tribological performance, the fade ratio was −6.2%, which was much higher than that of the specimen without the addition of PEEK fibers, the recovery ratio was 108.59% and the wear rate was the lowest, which was 1.497 × 10−7 cm3/(Nm)−1. The reason for the enhancing tribological performance was that, on the one hand, PEEK fibers have a high strength and modulus which can enhance the specimens at lower temperatures; on the other hand, molten PEEK at high temperatures can also promote the formation of secondary plateaus, which are beneficial for friction. The results in this paper can lay a foundation for future studies on intelligent RBFM. [ABSTRACT FROM AUTHOR]

With a goal of delay and power reduction in global buses, an air-gap technology for upper-layer interconnect is introduced. The fabrication process is discussed, utilizing ${h}$ -BN as an air-gap capping layer to enable large voids. The suitability of an air-gap technology for integration into the upper-layer back-end-of-line (BEOL) interconnect is evaluated in terms of the void ratio to the adjacent-line spacing. Electrical measurements show that adjacent-line capacitance is reduced by 50%. Mechanical reliability is ensured by Young’s modulus above BEOL requirement. Moisture uptake into air gaps is prevented using a hydrophobic capping layer. The integration of air gaps in global buses results in a 41% and 60% reduction in delay and crosstalk in the worst case switching scenario, based on parameters in the 14-nm technology node. It allows a 72% reduction in the energy-delay product with optimally designed repeaters. For the same delay, power consumption in an air-gapped global bus is reduced by requiring $4\times $ fewer repeaters. [ABSTRACT FROM AUTHOR]

An ultralow-k dielectric using structured pores to reduce interconnect propagation delay is demonstrated. By using a carbon nanotube (CNT) template, porous oxide with vertical cylindrical pores is formed on the Si3N4 etch-stop layer and successfully integrated with the copper damascene process. The resulting dielectric is anisotropic with an interlayer dielectric constant of k = 1.97 and an intralayer dielectric constant of k = 1.75 at a porosity of 65%. Compared with the conventional porous material with randomly arranged spherical pores, a much higher elastic modulus of 15.7 GPa is achieved to allow the chemical mechanical polish process at a porosity of 65%. [ABSTRACT FROM AUTHOR]

The rice husk (RH) combustion pretreatment method plays a crucial role in the extraction of nanoscale SiO2 from RH as a silicon source. This study examined the effects of diverse pretreatment methods and combustion temperatures on the particle size distribution of nanoscale high-purity amorphous SiO2 extracted from rice husk ash (RHA) post RH combustion. The experiment was structured using the Taguchi method, employing an L9 (21 × 33) orthogonal mixing table. The median diameter (D50) served as the output response parameter, with the drying method (A), combustion temperature (B), torrefaction temperature (C), and pretreatment method (D) as the input parameters. The results showed the torrefaction temperature (C) as being the predominant factor affecting the D50, which decreased with an increasing torrefaction temperature (C). The optimal parameter combination was identified as A2B2C3D2. The verification test revealed that roasting could improve the abrasiveness of Rh-based silica and reduce the average particle size. Torrefaction at medium temperatures might narrow the size distribution range of RHA-SiO2. We discovered that the purity of silica increased with an increasing roasting temperature by evaluating the concentration of silica in the sample. The production of RHA with silica concentrations up to 92.3% was investigated. X-ray diffraction analysis affirmed that SiO2's crystal structure remained unaltered across different treatment methods, consistently presenting as amorphous. These results provide a reference for extracting high-value products through RH combustion. [ABSTRACT FROM AUTHOR]

Azo compounds (RN = NR′) are an important class of organic molecules that find wide application in organic synthesis. Herein, we report an efficient, practical and metal-free oxidation of hydrazines (RNH-NHR') to azo compounds using 5 mol% HBr and hydrogen peroxide as terminal oxidant. This new method has been demonstrated by 40 examples with excellent yields. In addition, we showcased two examples of the one-pot sequential reactions involving our hydrazine oxidation/hydrolysis/Heck reaction or Cu-catalyzed N-arylation with aryl boronic acid. The distinct advantages of this protocol include metal-free catalysis, waste prevention, and easy operation. [Display omitted] [ABSTRACT FROM AUTHOR]

As the trajectory of transistor scaling defined by Moore's law encounters challenges, the paradigm of ever-evolving integrated circuit technology shifts to explore unconventional materials and architectures to sustain progress. Two-dimensional (2D) semiconductors, characterized by their atomic-scale thickness and exceptional electronic properties, have emerged as a beacon of promise in this quest for the continued advancement of field-effect transistor (FET) technology. The energy-efficient complementary circuit integration necessitates strategic engineering of both n-channel and p-channel 2D FETs to achieve symmetrical high performance. This intricate process mandates the realization of demanding device characteristics, including low contact resistance, precisely controlled doping schemes, high mobility, and seamless incorporation of high- κ dielectrics. Furthermore, the uniform growth of wafer-scale 2D film is imperative to mitigate defect density, minimize device-to-device variation, and establish pristine interfaces within the integrated circuits. This review examines the latest breakthroughs with a focus on the preparation of 2D channel materials and device engineering in advanced FET structures. It also extensively summarizes critical aspects such as the scalability and compatibility of 2D FET devices with existing manufacturing technologies, elucidating the synergistic relationships crucial for realizing efficient and high-performance 2D FETs. These findings extend to potential integrated circuit applications in diverse functionalities. [ABSTRACT FROM AUTHOR]

Synthesis of the vertically aligned carbon nanotubes (CNTs) using complementary metal-oxide-semiconductor (CMOS)-compatible methods is essential to integrate the CNT contact and interconnect to nanoscale devices and ultra-dense integrated nanoelectronics. However, the synthesis of high-density CNT array at low-temperature remains a challenging task. The advances in the low-temperature synthesis of high-density vertical CNT structures using CMOS-compatible methods are reviewed. Primarily, recent works on theoretical simulations and experimental characterizations of CNT growth emphasized the critical roles of catalyst design in reducing synthesis temperature and increasing CNT density. In particular, the approach of using multilayer catalyst film to generate the alloyed catalyst nanoparticle was found competent to improve the active catalyst nanoparticle formation and reduce the CNT growth temperature. With the multilayer catalyst, CNT arrays were directly grown on metals, oxides, and 2D materials. Moreover, the relations among the catalyst film thickness, CNT diameter, and wall number were surveyed, which provided potential strategies to control the tube density and the wall density of synthesized CNT array. [ABSTRACT FROM AUTHOR]

A fundamental limit for the supply voltage of conventional field‐effect transistors is the long high‐energy tail of the Boltzmann distribution of the carrier population at the source junction, which requires a gate voltage at least 60 mV to change one decade of current. Here 2D semiconductors are adopted as channel materials and hafnium zirconium oxide (HZO) as negative capacitance (NC) gate stack to realize low‐power complementary logic inverter. With HZO/Al2O3 NC gate stack, the 2D semiconductor field‐effect transistor (FET) shows an average subthreshold slope less than Boltzmann limit (as low as 18 mV dec−1) at room temperature for both forward and reverse gate voltage sweeps, which allows to reach the same ON‐state current at a lower Vdd without increasing the OFF‐state current. The drain current can be modulated by 5 × 104 within 220 mV, still exhibiting average SS below 60 mV dec−1. By constructing van der Waals contact to improve the charge injection and control the carrier type, unipolar p‐type WSe2 FET with reduced hole Schottky barrier height is achieved. The complementary inverter with MoS2 and WSe2 NCFETs shows the power consumption of 68 pW. [ABSTRACT FROM AUTHOR]

A method to synthesize high-density, vertically-aligned, multi-wall carbon nanotubes (MWCNTs) on an insulating substrate at low temperature using a complementary metal–oxide–semiconductor (CMOS) compatible process is presented. Two factors are identified to be important in the carbon nanotube (CNT) growth, which are the catalyst design and the substrate material. By using a Ni–Al–Ni multilayer catalyst film and a ZrO2 substrate, vertically-aligned CNTs can be synthesized at 340 °C using plasma-enhanced chemical vapor deposition (PECVD). Both the quality and density of the CNTs can be enhanced by increasing the synthesis temperature. The function of the aluminum interlayer in reducing the activation energy of the CNT formation is studied. The nanoparticle sintering and quick accumulation of amorphous carbon covering the catalyst can prematurely stop CNT synthesis. Both effects can be suppressed by using a substrate with a high surface energy such as ZrO2. [ABSTRACT FROM AUTHOR]