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Growth of GeSn films directly on Si substrates is desirable for integrated photonics applications since the absence of an intervening buffer layer simplifies device fabrication. Here, we analyze the microstructure of two GeSn films grown directly on (001) Si by remote plasma-enhanced chemical vapor deposition (RPECVD): a 1000 nm thick film containing 3% Sn and a 600 nm thick, 10% Sn film. Both samples consist of an epitaxial layer with nano twins below a composite layer containing nanocrystalline and amorphous. The epilayer has uniform composition, while the nanocrystalline material has higher levels of Sn than the surrounding amorphous matrix. These two layers are separated by an interface with a distinct, hilly morphology. The transition between the two layers is facilitated by formation of densely populated (111)-coupled nano twins. The 10% Sn sample exhibits a significantly thinner epilayer than the one with 3% Sn. The in-plane lattice mismatch between GeSn and Si induces a quasi-periodic misfit dislocation network along the interface. Film growth initiates at the interface through formation of an atomic-scale interlayer with reduced Sn content, followed by the higher Sn content epitaxial layer. A corrugated surface containing a high density of twins with elevated levels of Sn at the peaks begins forming at a critical thickness. Subsequent epitaxial breakdown at the peaks produces a composite containing high levels of Sn nanocrystalline embedded in lower level of Sn amorphous. The observed microstructure and film evolution provide valuable insight into the growth mechanism that can be used to tune the RPECVD process for improved film quality. [ABSTRACT FROM AUTHOR]

The 5th generation (5G) wireless telecommunication standards with newly defined frequency bands up to 6 GHz are currently established around the world. While outperforming surface acoustic wave (SAW) filters above 1 GHz, bulk acoustic wave (BAW) resonators in multiplexers for radio-frequency front-end (RFFE) modules continuously face higher performance requirements. In contrast to free-standing bulk acoustic resonators (FBARs), solidly mounted resonator (SMR) technology uses an acoustic Bragg mirror, which has already been successfully applied for several GHz applications. In this work, we investigate the potential of amorphous hydrogenated silicon-oxycarbonitride (a-SiOCN:H) thin films synthesized with low-temperature plasma-enhanced chemical vapor deposition (PECVD) as a low acoustic impedance (low-Z) material. Compared to the state-of-the-art where in Bragg mirrors up to now SiO2 is used as standard, the acoustic impedance ratio against the high-Z material tungsten (W) is enhanced for a better device performance. To limit the expected increase in viscous loss when the acoustic impedance is reduced, to a minimum, predominantly the mass density was reduced while keeping the mechanical elasticity high. By doing so, acoustic impedance values as low as 7.1 MRayl were achieved, thereby increasing the impedance ratio of high-Z to low-Z materials from 8:1 up to 14:1. [ABSTRACT FROM AUTHOR]

The use of copper (Cu) and silver (Ag) nanoparticles in coatings can eliminate surface microbial contamination. This study compared antibacterial activity of Cu- (Cu/CNTs) and Ag-coated carbon nanotubes (Ag/CNTs) synthesized by plasma-enhanced chemical vapor deposition (PECVD) against Escherichia coli and Staphylococcus aureus. Initially, the PECVD technique was applied to deposit the CNTs on high-resistivity silicon wafers previously decorated by nickel catalyst using an Electron Beam Gun. Then, the nanotubes were coated by Cu and Ag thin films in a vacuum evaporator using the Direct Current (DC) Magnetron Sputtering method. Finally, the antibacterial effects were determined by Standard Plate Count (SPC, with film thicknesses of 0, 10, 30 and 60 nm) and Disk Diffusion Test (based on zone of inhibition (ZOI) with nanoparticle concentrations of 5, 10 and 15 µg/mL). According to the SPC findings, the highest antibacterial activity of Cu/CNTs was found for the film thickness of 60 nm against E. coli (66%), and the lowest activity was related to the film thickness of 19 nm against S. aureus (28.8%). The antibacterial activity of Ag/CNTs was about 70% against E. coli with the highest thickness and about 34.12% against S. aureus. The lowest ZOI was measured for the bare CNTs at a concentration of 5 µg/mL (12 mm), and the highest ZOI was related to Ag/CNTs with a concentration of 15 µg/mL against S. aureus (18 mm). To conclude, the carbon nanotube composites coated with copper or silver nanoparticles can be used to control bacterial growth in aqueous solutions.

The increase of antibiotic-resistant strains has necessitated the generation of antibacterial agents that do not induce microbial resistance. The present study was conducted to evaluate the antibacterial effect of copper-coated carbon nanotubes (Cu/CNTs) synthesized by plasma-enhanced chemical vapor deposition (PECVD) on two strains of gram positive (Staphylococcus aureus) and gram negative (Escherichia coli) bacteria. First, the PECVD method was used to deposit carbon nanotubes (CNTs) on high-resistivity silicon wafers previously decorated with nickel catalyst by an electron beam gun. These nanotubes were then coated with copper thin films (Cu, 0– 60 nm) in a vacuum evaporator using the Direct Current (DC) Magnetron Sputtering method. The morphology of PECVD-grown Cu/CNTs was investigated by scanning electron microscope (SEM) and transmission electron microscope (TEM). The antibacterial properties of as-synthesized Cu/CNTs against Escherichia coli (E. coli) and Staphylococcus aureus (S. aureus) were determined using Standard Plate Count (SPC). The results showed that increasing the coating thickness of Cu/CNTs had intensified their antibacterial activity. The SEM and TEM images confirmed the morphological modification of the samples after coating with copper. [ABSTRACT FROM AUTHOR]

Germanium–tin (GeSn) alloys at sufficiently high Sn concentration, above several atomic percent, are the only group IV semiconductor exhibiting a direct bandgap and have generated much recent interest for optoelectronic applications into the mid-infrared region. Because the large lattice mismatch between GeSn and Si results in considerable strain for thin layers and a high defect density for thicker strain-relaxed layers, most reported GeSn growths incorporate a Ge buffer layer rather than depositing directly on Si substrates. Published reports of GeSn growth directly on Si utilize specialized precursors such as higher order germanes (Ge2H6, Ge3H8, or Ge4H10) or SnD4. In this paper, we report GeSn films with up to 10.6% Sn grown directly on Si substrates by remote plasma-enhanced chemical vapor deposition using GeH4 and SnCl4 precursors. These alloys have been characterized in detail using x-ray diffraction (XRD), transmission electron microscopy (TEM), and Rutherford backscattering spectrometry with channeling (RBS-C), as well as Raman spectroscopy (RS) and optical microscopy. The films studied are almost fully relaxed, with small residual strain observed, particularly in thinner films, and contain a high interface density of misfit dislocations that increases with Sn concentration. The defect density decreases toward the surface. Good agreement is found between the various characterization methods for the Sn content (XRD and RBS-C), lattice parameter measurement (XRD and TEM), and defect characterization (RBS-C, TEM, and RS). Such characterization of GeSn grown directly on Si substrates is essential to allow growth parameters to be optimized for the realization of the attractive optoelectronic properties of these alloys. [ABSTRACT FROM AUTHOR]

The study of BP layers and BP/n-Si heterojunctions formed by plasma enhanced chemical deposition on n-Si substrates has been carried out at a temperature of 350 °C using diborane and phosphine. The additional enhancement of hydrogen plasma power was established to make it possible to avoid pinning of the Fermi level at the BP/n-Si interface. Moreover, additional dilution with a hydrogen flow led to an increase in the BP layer conductivity, and the behavior of the current-voltage characteristic of the Au/BP/n-Si structure (golden electrode) became rectifying. Surface states of electrons at the BP/n-Si heterojunctions in all the samples and deep electronic levels with energy 0.58–0.65 eV in BP layers grown without the additional hydrogen flow were detected by admittance spectroscopy.

Graphene/stainless steel (SUS) structures have received attention as an approach to enhancing the performance of SUS in various applications, such as energy storage and electrochemical devices. Despite many studies, the synthesis of graphene nanostructures with controllable growth orientation on SUS remains challenging. The present work demonstrates the selective synthesis of monolayer to bilayer graphene and vertical graphene (i.e., carbon nanowalls) on SUS by plasma enhanced chemical vapor deposition and also explains the associated growth mechanisms. This study indicates that the graphene nucleation density can be tuned by varying the growth temperature and CH4/H2 ratio during synthesis. It is also evident that graphene growth occurs within a mixed phase of γ-Fe and Fe3C at high temperatures, and a high carbon supply of above 900 °C triggers the transition of growth orientation from planar to vertical. [ABSTRACT FROM AUTHOR]

Bulk acoustic wave (BAW) filters have been proven to be of high demand in today's low power RF front-ends for mobile communication devices. Within the launch of 5G applications worldwide, especially in the region of new radio (nr-1) up to 6 GHz, defined frequency bands require filters of wide bandwidths, while simultaneously featuring steep edges and high out-of-band rejection. Due to the coexistence with 4G LTE (long term evolution) wireless standards as well as advanced data transfer concepts such as carrier aggregation, the increasing complexity of antenna systems forces the implementation of highly selective acoustic filters. In contrast to the widely used surface acoustic wave (SAW) technology, BAW filters appear with superior performance for frequencies above 1 GHz. This work describes the fabrication of a BAW-solidly mounted resonator (BAW-SMR) with a tailored material system of a-SiOCN:H as a low impedance (low-Z) material integrated within its acoustic Bragg mirror. A direct comparison to the widely used low-Z material of SiO2 with an acoustic impedance of around 13 MRayl is demonstrated by two equal resonator stacks by replacing only the uppermost low-Z thin film of the acoustic reflector. A single-mask design was chosen with platinum as a bottom electrode to ensure the most equal growth conditions for the piezoelectric aluminum nitride (AlN) layers on both reflectors' surfaces featuring either the tailored a-SiOCN:H or standard SiO2. The a-SiOCN:H thin films were deposited by plasma-enhanced chemical vapor deposition and the according acoustic impedance was priorly depicted to 7.1 MRayl, which could be exploited to achieve an increase in the effective coupling coefficient beyond 7% as well as a resonator bandwidth of more than 60 MHz. [ABSTRACT FROM AUTHOR]

Abstract Large‐area graphene is typically synthesized on rolled‐annealed copper foils, which require transferring to other substrates for applications. This study examines large‐area graphene growth on electrodeposited (ED) copper foils—used in lithium‐ion batteries and printed circuit boards—via plasma‐enhanced chemical vapor deposition (PECVD). It reveals that, for a set plasma power, a minimum growth time ensures full graphene coverage, leading to monolayer and then multilayer graphene, showing PECVD growth on ED copper is not self‐limited. The process also beneficially modifies the ED copper substrate, like removing the surface zinc layer and changing copper grain size and orientation, thus improving graphene growth. Additionally, the study includes high‐frequency scattering parameter (S‐parameter) measurements in a coplanar waveguide (CPW) system. This involves graphene on a sapphire substrate with a silver electrode. The S‐parameter data indicate that the CPW with graphene shows reduced insertion losses in high‐frequency circuits compared to those without graphene. This underscores graphene's role in reducing insertion losses between metallic and dielectric layers in high‐frequency settings, offering valuable insights for industrial and technological applications.

Amorphous silicon carbide (a-SiC) is a wide-bandgap semiconductor with high robustness and biocompatibility, making it a promising material for applications in biomedical device passivation. a-SiC thin film deposition has been a subject of research for several decades with a variety of approaches investigated to achieve optimal properties for multiple applications, with an emphasis on properties relevant to biomedical devices in the past decade. This review summarizes the results of many optimization studies, identifying strategies that have been used to achieve desirable film properties and discussing the proposed physical interpretations. In addition, divergent results from studies are contrasted, with attempts to reconcile the results, while areas of uncertainty are highlighted. [ABSTRACT FROM AUTHOR]

In this study, the surface modification of titanium plates was performed using in situ nitriding via plasma-enhanced chemical vapor deposition to improve the conductivity and corrosion resistance of the plates. A series of titanium nitride (TiN) coatings were synthesized at different nitriding temperatures and durations. The influence of nitriding temperatures and durations on the surface morphology, hydrophobicity, interfacial conductivity, and corrosion resistance of the as-prepared coatings was investigated. The results indicated that faster growth and larger particle size of TiN are observed at higher temperatures. However, lower temperatures are unfavorable for surface reactions; thus, the coating cannot entirely cover the titanium substrate. Moreover, a shorter nitriding time results in irregular nanogrowth nuclei on the surface, leading to an uneven coating and bare titanium substrate. Conversely, longer nitriding time encourages the continuous accumulation of TiN nanoparticles and forms a uniform coating of the titanium substrate but decreases the flatness because of the stacking of the coatings due to the long nitriding time (120 min). The TiN coating prepared by nitriding at 650 °C for 90 min (TiN-650-90) is relatively compact and smooth with the composition of TiN0.26 and has an increased water contact angle of 105.4°. The change from hydrophilicity to hydrophobicity in TiN is beneficial to fuel cell water resistance. At a loading pressure of 1.5 MPa, the contact resistances of the coatings prepared at a nitriding time of 60 min can satisfy the U.S. Department of Energy requirement of less than 10 mΩ·cm2. Despite a contact resistance of 13.2 mΩ·cm2 for the TiN-650-90 coating, the contact resistance decreases with increasing loading pressure and is stable at 6.5 mΩ·cm2 under a loading pressure of 2.75 MPa. The corrosion current density of the TiN-650-90 coating is 0.56 μA·cm−2, and the corrosion potential positively shifts from −0.37 to −0.05 V at room temperature. The corrosion current density tested in the simulated operating environment of fuel cells is higher than that at room temperature but much lower than that of titanium (4.2 μA·cm−2). Furthermore, the current density is stable at 0.67 μA·cm−2 and at a −0.1 V constant potential, indicating superior corrosion resistance and stability than titanium. The titanium bipolar plates modified by this method exhibit the advantages of relatively low deposition temperature, quick deposition speed, and good hydrophobicity, conductivity, and corrosion resistance. This work can pave the way for efficient surface modification of metal bipolar plates.

Nanocrystalline silicon oxide (nc-SiOx:H) is a multipurpose material with varied applications in solar cells as a transparent front contact, intermediate reflector, back reflector layer, and even tunnel layer for passivating contacts, owing to the easy tailoring of its optical properties. In this work, we systematically investigate the influence of the gas mixture (SiH4, CO2, PH3, and H2), RF power, and process pressure on the optical, structural, and passivation properties of thin n-type nc-SiOx:H films prepared in an industrial, high-throughput, plasma-enhanced chemical vapor deposition (PECVD) reactor. We provide a detailed description of the n-type nc-SiOx:H material development using various structural and optical characterization techniques (scanning electron microscopy (SEM), energy dispersive X-ray (EDX), Raman spectroscopy, and spectroscopic ellipsometry) with a focus on the relationship between the material properties and the passivation they provide to n-type c-Si wafers characterized by their effective carrier lifetime (τeff). Furthermore, we also outline the parameters to be kept in mind while developing different n-type nc-SiOx:H layers for different solar cell applications. We report a tunable optical gap (1.8–2.3 eV) for our n-type nc-SiOx:H films as well as excellent passivation properties with a τeff of up to 4.1 ms (implied open-circuit voltage (iVoc)~715 mV) before annealing. Oxygen content plays an important role in determining the crystallinity and hence passivation quality of the deposited nanocrystalline silicon oxide films.

This study explores the low-temperature synthesis of graphene using plasma-enhanced chemical vapor deposition (PECVD), emphasizing the optimization of process parameters to achieve controlled growth of pristine and hydrogenated graphene. Graphene films were synthesized at temperatures ranging from 700 °C to as low as 400 °C by varying methane (25–100 sccm) and hydrogen (25–100 sccm) gas flow rates under 10–20 mBar pressures. Raman spectroscopy revealed structural transitions: pristine graphene grown at 700 °C exhibited strong 2D peaks with an I(2D)/I(G) ratio > 2, while hydrogenated graphene synthesized at 500 °C showed increased defect density with an I(D)/I(G) ratio of ~1.5 and reduced I(2D)/I(G) (~0.8). At 400 °C, the material transitioned to a highly hydrogenated amorphous carbon film, confirmed by photoluminescence (PL) in the Raman spectra. Atomic force microscopy (AFM) showed pristine graphene with a root mean square roughness (Rq) of 0.37 nm. By carefully adjusting PECVD synthesis parameters, it was possible to tune the surface roughness of hydrogenated graphene to levels close to that of pristine graphene or to achieve even smoother surfaces. Conductive AFM measurements revealed that hydrogenation could enhance graphene’s contact current under specific conditions. The findings highlight the role of PECVD parameters in tailoring graphene’s structural, morphological, and electronic properties for diverse applications. This work demonstrates a scalable, low-temperature approach to graphene synthesis, offering the potential for energy storage, sensing, and electronic devices requiring customized material properties.

Atmospheric-pressure (AP) plasma-enhanced chemical vapor deposition of silicon (Si) films was numerically simulated. The AP plasma used for Si depositions was excited by a 150-MHz very high-frequency (VHF) electric power, which was capable of generating continuous glow discharges covering the entire electrode surface. The experimental film thickness profiles could be well fitted by the simulations by adjusting the electron density in the plasma. The results showed that, although neutral–neutral reactions proceed very rapidly due to the frequent collisions between the gas species, the dissociation of the source SiH4 molecules by electron impact is the key factor that governs the chemistry occurring in the AP-VHF plasma and promotes the film growth on the substrate. The input power dependences of electrical property of the Si films could be explained by the contribution of SiH3 radical to the deposition. It was also shown that, even though the plasma was continuous glow, the electron density changed in the direction of gas flow, suggesting that the very rapid nucleation of clusters and their growth into nanoparticles were occurring in the AP-VHF plasma. [ABSTRACT FROM AUTHOR]

Silicene, a 2D hexagonal structure of silicon, has shown great promise for next-generation advanced electronic devices due to recent progress. However, one major obstacle to its application and integration into devices is its strong tendency of rapid oxidation in an ambient environment. Enhancing the chemical inertness by means of chemical modification without comprising its unique structure and properties is vital. Here, we report the fabrication of hydrogenated silicene grown on polycrystalline Ag films by means of plasma-enhanced chemical-vapor deposition (PECVD) with proper hydrogen dilution. Our Raman spectroscopy and x-ray diffraction results show the existence of typical monolayer and few-layer silicene. The x-ray photoelectron spectroscopy demonstrates its oxidation resistance after a few minutes of air exposure in a class 100 clean room. We propose that PECVD silicene can be an alternative to molecular-beam-epitaxy silicene for potential low-cost and large-area silicene applications. [ABSTRACT FROM AUTHOR]

In recent years, vertical graphene nanowalls (VGNWs) have gained significant attention due to their exceptional properties, including their high specific surface area, excellent electrical conductivity, scalability, and compatibility with transition metal compounds. These attributes position VGNWs as a compelling choice for various applications, such as energy storage, catalysis, and sensing, driving interest in their integration into next-generation commercial graphene-based devices. Among the diverse graphene synthesis methods, plasma-enhanced chemical vapor deposition (PECVD) stands out for its ability to create large-scale graphene films and VGNWs on diverse substrates. However, despite progress in optimizing the growth conditions to achieve micrometer-sized graphene nanowalls, a comprehensive understanding of the underlying physicochemical mechanisms that govern nanostructure formation remains elusive. Specifically, a deeper exploration of nanometric-level phenomena like nucleation, carbon precursor adsorption, and adatom surface diffusion is crucial for gaining precise control over the growth process. Hydrogen's dual role as a co-catalyst and etchant in VGNW growth requires further investigation. This review aims to fill the knowledge gaps by investigating VGNW nucleation and growth using PECVD, with a focus on the impact of the temperature on the growth ratio and nucleation density across a broad temperature range. By providing insights into the PECVD process, this review aims to optimize the growth conditions for tailoring VGNW properties, facilitating applications in the fields of energy storage, catalysis, and sensing. [ABSTRACT FROM AUTHOR]

[Display omitted] • A high barrier RC film was prepared by coagulation bath coupled with PECVD. • The oxygen transmission rate of the composite film was 31.21 cm3/(m2·d). • The water contact angle of the composite film was 116.7°. • The composite film was completely degraded in soil within 35 days. Regenerated cellulose (RC) films are considered a sustainable packaging material that can replace non-degradable petroleum-based plastics. However, their susceptibility to water vapor and oxygen can limit their effectiveness in protecting products. This study introduces a novel approach for enhancing RC films to create durable, flexible, hydrophobic, high-barrier, and biodegradable packaging materials. By exploring the impact of ascorbic acid coagulation bath treatment and plasma-enhanced chemical vapor deposition (PECVD) on the properties of RC films, we found that the coagulation bath treatment facilitated the organized reconfiguration of cellulose chains, while PECVD applied a dense SiO x coating on the film surface. The results demonstrated a significant enhancement in water vapor and oxygen barrier properties of the composite film, almost reaching the level of commercial barrier films. Moreover, the composite film displayed exceptional biodegradability, fully degrading in soil within 35 days. Additionally, it showcased impressive mechanical strength, hydrophobic characteristics, and freshness preservation, positioning it as a valuable option for bio-based high-barrier packaging applications. [ABSTRACT FROM AUTHOR]

The annealing properties of open spaces in 90-nm-thick SiO2 deposited from tetraethylorthosilicate (TEOS) using plasma-enhanced chemical vapor deposition (PECVD) were studied with monoenergetic positron beams. From the lifetime of positronium (Ps) and an empirical model assuming a spherical open space, the mean diameter of open spaces was estimated to be 0.45 nm for PECVD-SiO2 before annealing. In the annealing temperature range below 350 °C, the size of the open spaces and their concentration increased as the temperature increased. Because initial water desorption from PECVD-SiO2 occurred in this temperature range, the observed increases in the size and concentration of spaces were attributed to the detrapping of water from such regions. Above 400 °C annealing, Ps formation was suppressed due to carrier traps introduced by the desorption of gas incorporated during TEOS decomposition. The size of the open spaces reached its maximum value (0.61 nm) after 800 °C annealing and started to decrease above 900 °C. After 1000 °C annealing, although the size of the spaces was close to that in thermally grown SiO2, their concentration remained low, which was attributed to residual impurities in the SiO2 network. [ABSTRACT FROM AUTHOR]

Carbon nanotubes can be synthesized using various techniques. This work aims to study the experimental process of growing carbon nanotubes via plasma-enhanced chemical vapor deposition (PECVD). Additionally, the study aims to calibrate the reactor and develop a LabVIEW code to introduce water into the process, enabling a water-assisted PECVD procedure. The obtained samples are evaluated through the analysis of SEM images and Raman spectra. [ABSTRACT FROM AUTHOR]