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1,052 results on '"Ruhl, G."'

14. Dielectric material options for integrated capacitors

Author

Ruhl, G., Lehnert, W., Lukosius, M., Wenger, C., Baristiran Kaynak, C., Blomberg, T., Haukka, S., Baumann, P.K., Besling, W.F.A., Roest, A.L., Riou, B., Lhostis, S., Halimaou, A., Roozeboom, F., Langereis, E., Kessels, W.M.M., Zauner, A., Rushworth, S.A., Ruhl, G., Lehnert, W., Lukosius, M., Wenger, C., Baristiran Kaynak, C., Blomberg, T., Haukka, S., Baumann, P.K., Besling, W.F.A., Roest, A.L., Riou, B., Lhostis, S., Halimaou, A., Roozeboom, F., Langereis, E., Kessels, W.M.M., Zauner, A., and Rushworth, S.A.

Abstract

Future MIM capacitor generations will require significantly increased specific capacitances by utilization of high-k dielectric materials. In order to achieve high capacitance per chip area, these dielectrics have to be deposited in three-dimensional capacitor structures by ALD or AVD (atomic vapor deposition) process techniques. In this study eight dielectric materials, which can be deposited by these techniques and exhibit the potential to reach k-values of over 50 were identified, prepared and characterized as single films and stacked film systems. To primarily focus on a material comparison, preliminary processes were used for film deposition on planar test devices. Measuring leakage current density versus the dielectric constant k shows that at low voltages (=1 V) dielectrics with k-values up to 100 satisfy the typical leakage current density specification of

Published
2014

15. International Commercial Arbitration

Author

Basedow, J., Ferrari, F., De Miguel Asensio, P., Ruhl, G., Radicati Di Brozolo, Luca, Radicati di Brozolo, Luca (ORCID:0000-0003-1514-1335), Basedow, J., Ferrari, F., De Miguel Asensio, P., Ruhl, G., Radicati Di Brozolo, Luca, and Radicati di Brozolo, Luca (ORCID:0000-0003-1514-1335)

Published
2017

19. Graphene for Radio Frequency Applications: the GRADE project

Author

Fiori, Gianluca, Fregonese, S., Maneux, C., Zimmer, T., Di Lecce, V., Gnudi, A., Gnani, E., Reggiani, S., Baccarani, G., Venica, S., Driussi, F., Palestri, P., Selmi, L., Dabrowski, J., Lippert, G., Lupina, G., Vaziri, S., Oestling, M., Ruhl, G., Iannaccone, Giuseppe, and Lemme, M.

Published
2015

28. Going ballistic : Graphene hot electron transistors

Author

Vaziri, Sam, Smith, Anderson David, Östling, Mikael, Lupina, G., Dabrowski, J., Lippert, G., Mehr, W., Driussi, F., Venica, S., Di Lecce, V., Gnudi, A., Koenig, M., Ruhl, G., Belete, M., Lemme, M. C., Vaziri, Sam, Smith, Anderson David, Östling, Mikael, Lupina, G., Dabrowski, J., Lippert, G., Mehr, W., Driussi, F., Venica, S., Di Lecce, V., Gnudi, A., Koenig, M., Ruhl, G., Belete, M., and Lemme, M. C.

Abstract

This paper reviews the experimental and theoretical state of the art in ballistic hot electron transistors that utilize two-dimensional base contacts made from graphene, i.e. graphene base transistors (GBTs). Early performance predictions that indicated potential for THz operation still hold true today, even with improved models that take non-idealities into account. Experimental results clearly demonstrate the basic functionality, with on/off current switching over several orders of magnitude, but further developments are required to exploit the full potential of the GBT device family. In particular, interfaces between graphene and semiconductors or dielectrics are far from perfect and thus limit experimental device integrity, reliability and performance., QC 20160118

Published
2015
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30. Low dielectric constant materials for interlayer dielectric

Author

Treichel, H., Ruhl, G., Ansmann, P., Wurl, R., Müller, C., and Publica

Subjects
integrated circuit metallisation, dielectric thin films, permittivity
Abstract

The more advanced an integrated circuit becomes, the more stringent are the demands for certain properties of a dielectric or insulating material. In addition, it is essential that the layer maintain its specific electrical, physical and chemical properties after incorporation in the device structure and during subsequent processing. Due to temperature budget constraints and the accelerated decrease of feature sizes below 0.25 mu m one can no longer rely on traditional choices but has to search for alternatives, both for low and high permittivity replacements. In the article we survey currently used low dielectric constant materials and future trends for micro-electronic applications.

Published
1998

38. A 48-Core IA-32 Processor in 45 nm CMOS Using On-Die Message-Passing and DVFS for Performance and Power Scaling

Author

Howard, J, primary, Dighe, S, additional, Vangal, S R, additional, Ruhl, G, additional, Borkar, N, additional, Jain, S, additional, Erraguntla, V, additional, Konow, M, additional, Riepen, M, additional, Gries, M, additional, Droege, G, additional, Lund-Larsen, T, additional, Steibl, S, additional, Borkar, S, additional, De, V K, additional, and Van Der Wijngaart, R, additional

Published
2011
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45. An 80-Tile Sub-100-W TeraFLOPS Processor in 65-nm CMOS

Author

Vangal, S.R., primary, Howard, J., additional, Ruhl, G., additional, Dighe, S., additional, Wilson, H., additional, Tschanz, J., additional, Finan, D., additional, Singh, A., additional, Jacob, T., additional, Jain, S., additional, Erraguntla, V., additional, Roberts, C., additional, Hoskote, Y., additional, Borkar, N., additional, and Borkar, S., additional

Published
2008
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46. D&E Communications Inc

Subjects
D and E Communications Inc. -- Officials and employees, Telecommunications services industry -- Officials and employees, Business, Business, general
Published
2001

47. The integration of graphene into microelectronic devices.

Author

Ruhl G, Wittmann S, Koenig M, and Neumaier D

Abstract

Since 2004 the field of graphene research has attracted increasing interest worldwide. Especially the integration of graphene into microelectronic devices has the potential for numerous applications. Therefore, we summarize the current knowledge on this aspect. Surveys show that considerable progress was made in the field of graphene synthesis. However, the central issue consists of the availability of techniques suitable for production for the deposition of graphene on dielectric substrates. Besides, the encapsulation of graphene for further processing while maintaining its properties poses a challenge. Regarding the graphene/metal contact intensive research was done and recently substantial advancements were made towards contact resistances applicable for electronic devices. Generally speaking the crucial issues for graphene integration are identified today and the corresponding research tasks can be clearly defined.

Published
2017
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49. A TCP offload accelerator for 10 Gb/s ethernet in 90-nm CMOS

Author

Hoskote, Y., primary, Bloechel, B.A., additional, Dermer, G.E., additional, Erraguntla, V., additional, Finan, D., additional, Howard, J., additional, Klowden, D., additional, Narendra, S.G., additional, Ruhl, G., additional, Tschanz, J.W., additional, Vangal, S., additional, Veeramachaneni, V., additional, Wilson, H., additional, Xu, J., additional, and Borkar, N., additional

Published
2003
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