70 results on '"Nickelsilicide"'
Search Results
2. Zum Nickelsilikaterzbergbau bei Callenberg
- Author
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Boeck, Helmut-Juri, Boeck, Helmut-Juri, and Mitka, Lutz
- Subjects
Sachsen ,Callenberg (Region) ,Erzbergbau ,Nickelsilicide ,Geschichte ,ddc:550 ,unbekannter Bergbau, Erzbergbau, Nickel, Callenberg - Published
- 2017
3. Nanoscale Investigation of the Interface Situation of Plated Nickel and Thermally Formed Nickel Silicide for Silicon Solar Cell Metallization
- Author
-
Stefan W. Glunz, Annika Zuschlag, Markus Glatthaar, A. Mondon, Jonas Bartsch, Di Wang, and Publica
- Subjects
Materials science ,Silicon ,Oxide ,General Physics and Astronomy ,chemistry.chemical_element ,Context (language use) ,silicide ,law.invention ,chemistry.chemical_compound ,law ,Plating ,Silicide ,Solar cell ,Charakterisierung ,TEM-Analysis ,Kontaktierung und Strukturierung ,Solarzellen - Entwicklung und Charakterisierung ,Metallurgy ,Surfaces and Interfaces ,General Chemistry ,Condensed Matter Physics ,Surfaces, Coatings and Films ,Silicium-Photovoltaik ,Nickel ,Nickelsilicide ,chemistry ,Cell Metallization ,Crystallite ,Zellen und Module - Abstract
In the context of nickel silicide formation from plated nickel layers for solar cell metallization, there are several open questions regarding contact adhesion and electrical properties. Nanoscale characterization by transmission electron microscopy has been employed to support these investigations. Interfacial oxides and silicide phases were investigated on differently prepared samples by different analytical methods associated with transmission electron microscopy analysis. Processing variations included the pre-treatment of samples before nickel plating, the used plating solution and the thermal budget for the nickel–silicon solid-state reaction. It was shown that interface oxides of only few nm thickness on both silicon and nickel silicide are present on the samples, depending on the chosen process sequence, which have been shown to play an important role in adhesion of nickel on silicide in an earlier publication. From sample pretreatment variations, conclusions about the role of an interfacial oxide in silicide formation and its influence on phase formation were drawn. Such an oxide layer hinders silicide formation except for pinhole sites. This reduces the availability of Ni and causes a silicide with low Ni content to form. Without an interfacial oxide a continuous nickel silicide of greater depth, polycrystalline modification and expected phase according to thermal budget is formed. Information about the nature of silicide growth on typical solar cell surfaces could be obtained from silicide phase and geometric observations, which were supported by FIB tomography. The theory of isotropic NiSi growth and orientation dependent NiSi2 growth was derived. By this, a very well performing low-cost metallization for silicon solar cells has been brought an important step closer to industrial introduction.
- Published
- 2014
4. Thermodynamische und kinetische Untersuchungen der Reaktivität von Nickelsiliciden im System Ni-Si-Cl-H
- Author
-
Acker, Jörg, Bohmhammel, K., Roewer, G., Binnewies, M., and TU Bergakademie Freiberg
- Subjects
ddc:540 ,Nickelsilicide, Gas-Fest-Reaktion, Thermodynamik, Kinetik, Katalyse, Silicide - Abstract
Übergangsmetallsilicide, die geringe Mengen Chlor enthalten, dienen als Modellverbindungen für Katalysatoren in der technischen Siliciumchemie. Bei der Umsetzung von Nickelsiliciden mit NiCl2 entstehen solche chlorhaltigen Silicide. Die erhaltenen Verbindungen wurden chemisch, strukturell und spektroskopisch charakterisiert und thermodynamisch modelliert. Aus kinetischen und thermodynamischen Untersuchungen der Gesamtreaktion sowie der ablaufenden Teilreaktionen, wird ein Modell über den Reaktionsverlauf abgeleitet. Die Bildung chlorhaltiger Nickelsilicide verläuft über gekoppelte Gas-Fest- und Fest-Fest-Reaktionen, in denen metastabile, intermediäre chlorreiche Phasen entstehen. Rückschlüsse auf die technisch relevanten Prozesse werden gezogen.
- Published
- 1998
5. Komplexe Röntgendiffraktometrie an Dünnschichtsystemen
- Author
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Mildner, Marcus, Hoyer, Walter, Hinneberg, Hans-Jürgen, and Technische Universität Chemnitz
- Subjects
Nickelsilicide ,ddc:530 ,Spannungsanalyse ,Korngrößenanalyse ,Röntgendiffraktometrie ,Röntgenreflektometrie - Abstract
Ziel dieser Arbeit war es, die in der Professur Oberflächen- und Grenzflächenphysik hergestellten Schichtsysteme strukturell zu charakterisieren. Mit Hilfe der Röntgendiffraktometrie (XRD) ist es möglich, die Phasen und die Orientierung der aufgewachsenen Schicht zu bestimmen. Mit einem weiteren Verfahren, der Röntgenreflektometrie (XRR), lassen sich Aussagen über die Schichtqualität treffen. Durch die Kombination dieser Methoden erhält man detaillierte Auskünfte über die Proben.
- Published
- 2005
6. Untersuchungen zu Phasen im System Nickel/Silicium/Halogen
- Author
-
Otto, Ronald, Roewer, Gerhard, Bohmhammel, Klaus, Oppermann, Heinrich, and TU Bergakademie Freiberg
- Subjects
ddc:540 ,Silicide, Nickelsilicide, Siliciumverbindungen, intermetallische Verbindungen, Nickelverbindungen - Abstract
Nickel-Silicidphasen wurden auf neuen Synthesewegen bei relativ niedrigen Temperaturen und kurzen Reaktionszeiten präpariert. Die Belastung von dispersem Metall mit Siliciumtetrachlorid liefert Produkte, die mit den thermodynamischen Berechnungen korrelieren. Bei der direkten Umsetzung von Nickelhalogeniden mit Silicium beeinflussen die Versuchsbedingungen wesentlich die Zusammensetzung der resultierenden Phasengemische. Durch Temperungen reduziert sich der Bestand an Silicidphasen. Die Umsetzung von Nickelchlorid und Silicium gelang erstmals auch in einer KCl/LiCl-Salzschmelze als Reaktionsmedium, wodurch sich thermodynamisch vorhersagbare Silicidphasen erhalten lassen. In einigen Fällen deuten die Ergebnisse auf die Bildung halogenhaltiger, bei Raumtemperatur metastabiler Silicidphasen hin. Zum Reaktionsmechanismus werden zwei über die Oxidationsstufe +2 des Siliciums verlaufende Routen diskutiert.
- Published
- 2003
7. Surfactant-gesteuertes Wachstum von Siliciden
- Author
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Hortenbach, Heiko, Hinneberg, H.-J., Hecht, G., Mantl, S., and Technische Universität Chemnitz
- Subjects
Titansilicide ,Nickelsilicide ,Antimon ,reaktive Abscheidung ,Mangansilicide ,surfactant ,Molekularstrahlepitaxie ,ddc:530 ,dünne Schichten ,Si(001) - Abstract
Die Methode der Reaktiven Abscheidung wurde benutzt, um zu untersuchen ob und in welcher Weise das Silicidwachstum mittels einer Monolage aus Sb, d.h. mittels eines surfactant (surface active agent), gesteuert werden kann. Hierzu wurden unter UHV-Bedingungen die Metalle Mn, Ti und Ni auf geheizte Si(001) bzw. Si(001)-Sb Substrate abgeschieden. Die Probenanalyse erfolgte durch LEED, RBS, XRD, SEM, TEM und AFM. Die Theorie zum surfactant-gesteuerten Wachstum wird vorgestellt und auf das System des reaktiven Silicidwachstums übertragen. Die Probenanalysen zeigen, dass eine Monolage von Sb in der Lage ist das Wachstum der drei untersuchten Silicide zu beeinflussen. Für das System der Höheren Mangansilicide kommt es zu einer Erhöhung der Inseldichte um bis zu zwei Größenordnungen und zu Änderungen in den Orientierungsbeziehungen der Silicidinseln. Beim Wachstum der Titansilicidschichten konnte durch das surfactant die pinhole-Bildung unterdrückt werden. Das dritte untersuchte Silicid ist das Nickeldisilicid. In diesem Fall wird der Ort der Keimbildung von der Si-Oberfläche in das Volumen des Si-Substrates verschoben, d.h. die Oberfläche wird vollständig passiviert, zusätzlich treten neue Orientierungsbeziehungen auf.
- Published
- 2003
8. Thermodynamische und kinetische Untersuchungen der Reaktivität von Nickelsiliciden im System Ni-Si-Cl-H
- Author
-
Bohmhammel, K., Roewer, G., Binnewies, M., TU Bergakademie Freiberg, Acker, Jörg, Bohmhammel, K., Roewer, G., Binnewies, M., TU Bergakademie Freiberg, and Acker, Jörg
- Abstract
Übergangsmetallsilicide, die geringe Mengen Chlor enthalten, dienen als Modellverbindungen für Katalysatoren in der technischen Siliciumchemie. Bei der Umsetzung von Nickelsiliciden mit NiCl2 entstehen solche chlorhaltigen Silicide. Die erhaltenen Verbindungen wurden chemisch, strukturell und spektroskopisch charakterisiert und thermodynamisch modelliert. Aus kinetischen und thermodynamischen Untersuchungen der Gesamtreaktion sowie der ablaufenden Teilreaktionen, wird ein Modell über den Reaktionsverlauf abgeleitet. Die Bildung chlorhaltiger Nickelsilicide verläuft über gekoppelte Gas-Fest- und Fest-Fest-Reaktionen, in denen metastabile, intermediäre chlorreiche Phasen entstehen. Rückschlüsse auf die technisch relevanten Prozesse werden gezogen.
- Published
- 2009
9. Nucleation and Atomic Layer Reaction in Nickel Silicidefor Defect-Engineered Si Nanochannels.
- Author
-
Tang, Wei, Picraux, S. Tom, Huang, Jian Yu, Gusak, Andriy M., Tu, King-Ning, and Dayeh, Shadi A.
- Subjects
- *
NUCLEATION , *ATOMIC layer deposition , *CHEMICAL reactions , *SILICIDES , *CRYSTAL defects , *SILICON , *PHASE transitions - Abstract
At the nanoscale, defects can significantlyimpact phase transformationprocesses and change materials properties. The material nickel silicidehas been the industry standard electrical contact of silicon microelectronicsfor decades and is a rich platform for scientific innovation at theconjunction of materials and electronics. Its formation in nanoscalesilicon devices that employ high levels of strain, intentional, andunintentional twins or grain boundaries can be dramatically differentfrom the commonly conceived bulk processes. Here, using in situ high-resolutiontransmission electron microscopy (HRTEM), we capture single eventsduring heterogeneous nucleation and atomic layer reaction of nickelsilicide at various crystalline boundaries in Si nanochannels forthe first time. We show through systematic experiments and analyticalmodeling that unlike other typical face-centered cubic materials suchas copper or silicon the twin defects in NiSi2have highinterfacial energies. We observe that these twin defects dramaticallychange the behavior of new phase nucleation and can have direct implicationsfor ultrascaled devices that are prone to defects or may utilize themto improve device performance. [ABSTRACT FROM AUTHOR]
- Published
- 2013
- Full Text
- View/download PDF
10. Device design and process integration for SiGeC and Si/SOI bipolar transistors
- Author
-
Haralson, Erik and Haralson, Erik
- Abstract
SiGe is a significant enabling technology for therealization of integrated circuits used in high performanceoptical networks and radio frequency applications. In order tocontinue to fulfill the demands for these applications, newmaterials and device structures are needed. This thesis focuseson new materials and their integration into heterojunctionbipolar transistor (HBT) structures as well as using devicesimulations to optimize and better understand the deviceoperation. Specifically, a SiGeC HBT platform was designed,fabricated, and electrically characterized. The platformfeatures a non-selectively grown epitaxial SiGeC base,in situdoped polysilicon emitter, nickel silicide,LOCOS isolation, and a minimum emitter width of 0.4 μm.Alternately, a selective epitaxy growth in an oxide window wasused to form the collector and isolation regions. Thetransistors exhibited cutoff frequency (fT) and maximum frequency of oscillation (fMAX) of 40-80 GHz and 15-45 GHz, respectively.Lateral design rules allowed the investigation of behavior suchas transient enhanced diffusion, leakage current, and theinfluence of parasitics such as base resistance and CBC. The formation of nickel silicide on polysiliconSiGe and SiGeC films was also investigated. The formation ofthe low resistivity monosilicide phase was shown to occur athigher temperatures on SiGeC than on SiGe. The stability of themonosilicide was also shown to improve for SiGeC. Nickelsilicide was then integrated into a SiGeC HBT featuring aselectively grown collector. A novel, fully silicided extrinsicbase contact was demonstrated along with the simultaneousformation of NiSi on thein situdoped polysilicon emitter. High-resolution x-ray diffraction (HRXRD) was used toinvestigate the growth and stability of SiGeC base layers forHBT integration. HRXRD proved to be an effective, fast,non-destructive tool for monitoring carbon out-diffusion due tothe dopant activation anneal for different temperatures as wellas for inline process mo
- Published
- 2004
11. Structural insight into an atomic layer deposition (ALD) grown Al2O3 layer on Ni/SiO2: impact on catalytic activity and stability in dry reforming of methane.
- Author
-
Kim, Sung Min, Armutlulu, Andac, Liao, Wei-Chih, Hosseini, Davood, Stoian, Dragos, Chen, Zixuan, Abdala, Paula M., Copéret, Christophe, and Müller, Christoph
- Published
- 2021
- Full Text
- View/download PDF
12. Technology requirements for Ni/Cu plating metallization in commercial PV.
- Author
-
Yuan-Chih Chang, Sisi Wang, Rong Deng, Xiaoli Li, Beibei Zhu, Shaoyuan Li, and Jingjia Ji
- Published
- 2021
13. Deposition of silicon modified aluminide coatings on nickel base superalloys by pack cementation process.
- Author
-
Xiang, Z. D. and Datta, P. K.
- Subjects
- *
SILICON compounds , *ALLOYS , *METALLIC composites , *METALS , *THERMOMECHANICAL treatment , *STRAIN hardening , *HEAT treatment of metals - Abstract
The equilibrium partial pressures of vapour species generated in halide activated pack powder mixtures at high temperatures were calculated for a series of compositions using thermochemical analysis tools. The results obtained were applied to identify suitable activators and pack compositions for codepositing Al and Si to form diffusion coatings on nickel base superalloys by the pack cementation process. The calculation results suggested that compositions of the packpowder mixtures activated by CrCl[sub 3].6H[sub 2]O may be adjusted to create deposition conditions favourable for codepositing Al and Si, but, those activated byAlF[sub 3]or AlCl[sub 3] may only deposit Al.A series of coating deposition experiments were also carried out at 1000 ° C and 1100 ° C and the results obtained confirmed that, with adequate control of pack compositions and deposition conditions, codeposition of Al and Si can be achieved with CrCl[sub 3].6H[sub 2]O activated pack powder mixtures. A mixture of elemental Al and Si powders may be used as a depositing source instead of using Al-Si master alloy powders as conventionally recommended. The coatings could be formed either through the inward diffusions of Al and Si or through the outward diffusion of Ni together with other substrate elements such as Cr and Co, depending on the deposition temperature used. Prolonged deposition at 1100 ° C ledtothe formationofa coatingwith amultilayeredstructure consistingofanouter nickelsilicide layerand a middle Simodified NiAl layer followed by a diffusion zone. The pack compositions and deposition conditions may be adjusted to control the microstructure of the coatings formed by the codeposition process. [ABSTRACT FROM AUTHOR]
- Published
- 2003
- Full Text
- View/download PDF
14. High-Quality Nickel Silicide MOS Capacitors Fabricated with a Cl Plasma Containing NiCl
- Author
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Hirose, Fumihiko, Kanomata, Kensaku, Suzuki, Takahiko, and Oyama, Naoki
- Abstract
We have successfully fabricated nickelsilicide-metalgate MOS capacitors at a low temperature of 280aC by treating poly Si stacked SiO2/Si substrates with a Cl plasma containing NiCl. We have confirmed atomically sharp NiSi/oxide interfaces after the present process where any interface segregation can not be observed by cross-sectional TEM measurements. The present process allows a control of Ni concentration in the gate metal film and the work function in the gate metal is adjustable in the range from 4.3 to 4.9 eV, which is suitable for the Si CMOS process.
- Published
- 2008
15. Low-Temperature Nickel Silicide Formation on SiO2 Films with a Cl Plasma Containing NiCl
- Author
-
Hirose, Fumihiko, Fujiwara, Naoto, Ohshima, Shigetoshi, and Sakamoto, Hitoshi
- Abstract
Nickelsilicide-metalgate MOS structures have been successfully fabricated at a low temperature of 280aC by treating poly Si films stacked SiO2/Si substrates with a Cl plasma containing NiCl. In this process, NiCl in the Cl plasma is adsorbed to the poly Si surface and Ni atoms from NiCl are diffused into the poly Si films while Cl from NiCl binds with Si to desorb as SiCl. By changing the NiCl flux and process time, Ni content in the poly Si films can be controlled in the range from 0 to 80%. The present technique is available to fabricate metal gate MOS devices with various Ni contents at near room temperatures.
- Published
- 2007
16. Silicide-phase evolution and platinum redistribution during silicidation of Ni0.95Pt0.05/Si(100) specimens.
- Author
-
Adusumilli, Praneet, Seidman, David N., and Murray, Conal E.
- Subjects
SILICIDES ,SILICON compounds ,X-ray diffraction ,PLATINUM ,DISLOCATIONS in crystals ,CRYSTAL grain boundaries ,MICROSTRUCTURE - Abstract
We investigated the temporal evolution of nickel-silicide phase-formation and the simultaneous redistribution of platinum during silicidation of a 10 nm thick Ni0.95Pt0.05 film on a Si(100) substrate. Grazing incidence x-ray diffraction (GIXRD) and atom-probe tomography (APT) measurements were performed on as-deposited films and after rapid thermal annealing (RTA) at 320 or 420 °C for different times. Observation of the Ni2Si phase in as-deposited films, both with and without platinum alloying, is attributed to surface preparation. RTA at 320 °C for 5 s results in the formation of the low-resistivity NiSi intermetallic phase and nickel-rich phases, Ni2Si and Ni3Si2, as demonstrated by GIXRD measurements. At 420 °C for 5 s, the NiSi phase grows outward from the silicide/Si(100) interface by consuming the nickel-rich silicide phases. On increasing the annealing time at 420 °C to 30 min, this reaction is driven towards completion. The nickel-silicide/silicon interface is reconstructed in three-dimensions employing APT and its chemical root-mean-square roughness, based on a silicon isoconcentration surface, decreases to 0.6 nm with the formation of the NiSi phase during silicidation. Pt redistribution is affected by the simultaneous reaction between Ni and Si during silicidation, and it influences the resulting microstructure and thermal stability of the NiSi phase. Short-circuit diffusion of Pt via grain boundaries in NiSi is observed, which affects the resultant grain size, morphology, and possibly the preferred orientation of the NiSi grains. Pt segregates at the NiSi/Si(100) heterophase interface and may be responsible for the morphological stabilization of NiSi against agglomeration to temperatures greater than 650 °C. The Gibbsian interfacial excess of Pt at the NiSi/Si(100) interface after RTA at 420 °C for 5 s is 1.2 ± 0.01 atoms nm-2 and then increases to 2.1 ± 0.02 atoms nm-2 after 30 min at 420 °C, corresponding to a decrease in the interfacial free energy of 7.1 mJ m-2. [ABSTRACT FROM AUTHOR]
- Published
- 2012
- Full Text
- View/download PDF
17. Transition metal silicides: fundamentals, preparation and catalytic applications.
- Author
-
Chen, Xiao and Liang, Changhai
- Published
- 2019
- Full Text
- View/download PDF
18. On-chip metal/polypyrrole quasi-reference electrodes for robust ISFET operation.
- Author
-
Duarte-Guevara, Carlos, Swaminathan, Vikhram V., Burgess, Mark, Reddy, Bobby, Salm, Eric, Liu, Yi-Shao, Rodriguez-Lopez, Joaquin, and Bashir, Rashid
- Subjects
ION sensitive field effect transistors ,POLYPYRROLE ,ELECTRODES ,ELECTRIC potential ,SOLID state chemistry ,ROBUST control ,CYCLIC voltammetry - Abstract
To operate an ion-sensitive field-effect transistor (ISFETs) it is necessary to set the electrolyte potential using a reference electrode. Conventional reference electrodes are bulky, fragile, and too big for applications where the electrolyte volume is small. Several researchers have proposed tackling this issue using a solid-state planar micro-reference electrode or a reference field-effect transistor. However, these approaches are limited by poor robustness, high cost, or complex integration with other microfabrication processes. Here we report a simple method to create robust on-chip quasi-reference electrodes by electrodepositing polypyrrole on micro-patterned metal leads. The electrodes were fabricated through the polymerization of pyrrole on patterned metals with a cyclic voltammetry process. Open circuit potential measurements were performed to characterize the polypyrrole electrode performance, demonstrating good stability (±1 mV), low drift (∼1 mV h
−1 ), and reduced pH response (5 mV per pH). In addition, the polypyrrole deposition was repeated in microelectrodes made of different metals to test compatibility with standard complementary metal-oxide-semiconductor (CMOS) processes. Our results suggest that nickel, a metal commonly used in semiconductor foundries for silicide formation, is a good candidate to form the polypyrrole quasi-reference electrodes. Finally, the polypyrrole microelectrodes were used to operate foundry fabricated ISFETs. These experiments demonstrated that transistors biased with polypyrrole electrodes have pH sensitivity and resolution comparable to ones that are biased with standard reference electrodes. Therefore, the simple fabrication, high compatibility, and robust electrical performance make polypyrrole an ideal choice for the fabrication of outstanding microreference electrodes that enable robust and sensitive operation of multiple ISFET sensors on a chip. [ABSTRACT FROM AUTHOR]- Published
- 2015
- Full Text
- View/download PDF
19. Characteristics of a nickel thin film and formation of nickel silicide by using remote plasma atomic layer deposition with Ni(Pr-DAD).
- Author
-
Kim, Jinho, Jang, Woochool, Park, Jingyu, Jeon, Heeyoung, Kim, Hyunjung, Yuh, Junhan, and Jeon, Hyeongtag
- Published
- 2015
- Full Text
- View/download PDF
20. Bringing reconfigurable nanowire FETs to a logic circuits compatible process platform.
- Author
-
Simon, M., Heinzig, A., Trommer, J., Baldauf, T., Mikolajick, T., and Weber, W. M.
- Published
- 2016
- Full Text
- View/download PDF
21. Nickel Silicide Work Function Tuning Study In Metal-Gate CMOS Applications.
- Author
-
Yuan, Jun, Pan, Grant Z., Chao, Yu-Lin, and Woo, Jason C. S.
- Published
- 2004
- Full Text
- View/download PDF
22. Copper conducting electrode with nickel as a seed layer for selective emitter crystalline silicon solar cells.
- Author
-
Rehman, Atteq, Shin, Eun, and Lee, Soo
- Published
- 2014
- Full Text
- View/download PDF
23. Aktuelle Informationen: CHEMKON 1/2014.
- Published
- 2014
- Full Text
- View/download PDF
24. High-Performance Double-Layer Nickel Nanocrystal Memory by Ion Bombardment Technique.
- Author
-
Liu, Sheng-Hsien, Yang, Wen-Luh, Lin, Yu-Hsien, Wu, Chi-Chang, and Chao, Tien-Sheng
- Subjects
ION bombardment ,NANOCRYSTALS manufacturing ,SILICON nitride ,INTEGRATED circuits ,RECORDS management ,DIELECTRICS - Abstract
A novel ion bombardment (IB) technique is presented to fabricate and embed double-layer (DL) Ni nanocrystal (NC) in silicon nitride for TaN/Al2O3/Si3N4/SiO2/Si nonvolatile memory applications. In contrast to other methods of forming DL metal NC, the IB technique is a relatively simple fabrication method and completely compatible with the current IC manufacturing technologies. Using the IB technique, a high-quality ultrathin interlayer between top and bottom layered NCs can be easily formed and controlled. Compared with the control sample, the IB-induced DL Ni NC memory exhibits superior performance in terms of faster program and erase (P/E) speeds, longer data retention, better endurance, negligible program disturbance, and great potential for a multilevel operation. In addition, the IB-induced DL Ni NC device also shows higher P/E efficiency as well as similar excellent reliability by comparison with other conventional DL metal NC memories due to the high-quality ultrathin interlayer. [ABSTRACT FROM AUTHOR]
- Published
- 2013
- Full Text
- View/download PDF
25. Untersuchungen zu Phasen im System Nickel/Silicium/Halogen
- Author
-
Roewer, Gerhard, Bohmhammel, Klaus, Oppermann, Heinrich, TU Bergakademie Freiberg, Otto, Ronald, Roewer, Gerhard, Bohmhammel, Klaus, Oppermann, Heinrich, TU Bergakademie Freiberg, and Otto, Ronald
- Abstract
Nickel-Silicidphasen wurden auf neuen Synthesewegen bei relativ niedrigen Temperaturen und kurzen Reaktionszeiten präpariert. Die Belastung von dispersem Metall mit Siliciumtetrachlorid liefert Produkte, die mit den thermodynamischen Berechnungen korrelieren. Bei der direkten Umsetzung von Nickelhalogeniden mit Silicium beeinflussen die Versuchsbedingungen wesentlich die Zusammensetzung der resultierenden Phasengemische. Durch Temperungen reduziert sich der Bestand an Silicidphasen. Die Umsetzung von Nickelchlorid und Silicium gelang erstmals auch in einer KCl/LiCl-Salzschmelze als Reaktionsmedium, wodurch sich thermodynamisch vorhersagbare Silicidphasen erhalten lassen. In einigen Fällen deuten die Ergebnisse auf die Bildung halogenhaltiger, bei Raumtemperatur metastabiler Silicidphasen hin. Zum Reaktionsmechanismus werden zwei über die Oxidationsstufe +2 des Siliciums verlaufende Routen diskutiert.
- Published
- 2009
26. Scaling of CMOS FinFETs towards 10 nm.
- Author
-
Hao-Yu Chen, Chien-Chao Huang, Cheng-Chuan Huang, Chang-Yun Chang, Yee-Chia Yeo, Fu-Liang Yang, and Chenming Hu
- Published
- 2003
- Full Text
- View/download PDF
27. Das Dreistoffsystem Nickel-Bor-Silicium.
- Author
-
Lugscheider, E., Reimann, H., and Knotek, O.
- Abstract
The ternary system Nickel-Boron-Silicon was established at 850°C by means of X-ray diffraction, metallographic and micro-hardness examinations. The well known binary nickel borides and silicides resp. were confirmed. In the boron-silicon system two binary phases, SiB with x≈0.7 and SiB were found the latter in equilibrium with the β-rhombohedral boron. Confirming the two ternary silicon borides a greater homogeneity range was found for NiSiB, the phase NiSiB published by Uraz and Rundqvist can better be described by the formula NiSiB. In relation to further investigations we measured melting temperatures in ternary Ni-10 B−Si alloys by differential thermoanalysis. [ABSTRACT FROM AUTHOR]
- Published
- 1975
- Full Text
- View/download PDF
28. Methoden der Charakterisierung von Hochtemperaturschutzschichten auf metallischen Werkstoffen.
- Author
-
Bauer, R.
- Abstract
Copyright of Fresenius' Zeitschrift für Analytische Chemie is the property of Springer Nature and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
- Published
- 1984
- Full Text
- View/download PDF
29. Komplexe Röntgendiffraktometrie an Dünnschichtsystemen
- Author
-
Hoyer, Walter, Hinneberg, Hans-Jürgen, Technische Universität Chemnitz, Mildner, Marcus, Hoyer, Walter, Hinneberg, Hans-Jürgen, Technische Universität Chemnitz, and Mildner, Marcus
- Abstract
Ziel dieser Arbeit war es, die in der Professur Oberflächen- und Grenzflächenphysik hergestellten Schichtsysteme strukturell zu charakterisieren. Mit Hilfe der Röntgendiffraktometrie (XRD) ist es möglich, die Phasen und die Orientierung der aufgewachsenen Schicht zu bestimmen. Mit einem weiteren Verfahren, der Röntgenreflektometrie (XRR), lassen sich Aussagen über die Schichtqualität treffen. Durch die Kombination dieser Methoden erhält man detaillierte Auskünfte über die Proben.
- Published
- 2005
30. Surfactant-gesteuertes Wachstum von Siliciden
- Author
-
Hinneberg, H.-J., Hecht, G., Mantl, S., Technische Universität Chemnitz, Hortenbach, Heiko, Hinneberg, H.-J., Hecht, G., Mantl, S., Technische Universität Chemnitz, and Hortenbach, Heiko
- Abstract
Die Methode der Reaktiven Abscheidung wurde benutzt, um zu untersuchen ob und in welcher Weise das Silicidwachstum mittels einer Monolage aus Sb, d.h. mittels eines surfactant (surface active agent), gesteuert werden kann. Hierzu wurden unter UHV-Bedingungen die Metalle Mn, Ti und Ni auf geheizte Si(001) bzw. Si(001)-Sb Substrate abgeschieden. Die Probenanalyse erfolgte durch LEED, RBS, XRD, SEM, TEM und AFM. Die Theorie zum surfactant-gesteuerten Wachstum wird vorgestellt und auf das System des reaktiven Silicidwachstums übertragen. Die Probenanalysen zeigen, dass eine Monolage von Sb in der Lage ist das Wachstum der drei untersuchten Silicide zu beeinflussen. Für das System der Höheren Mangansilicide kommt es zu einer Erhöhung der Inseldichte um bis zu zwei Größenordnungen und zu Änderungen in den Orientierungsbeziehungen der Silicidinseln. Beim Wachstum der Titansilicidschichten konnte durch das surfactant die pinhole-Bildung unterdrückt werden. Das dritte untersuchte Silicid ist das Nickeldisilicid. In diesem Fall wird der Ort der Keimbildung von der Si-Oberfläche in das Volumen des Si-Substrates verschoben, d.h. die Oberfläche wird vollständig passiviert, zusätzlich treten neue Orientierungsbeziehungen auf.
- Published
- 2003
31. High-Quality Nickel Silicide MOS Capacitors Fabricated with a Cl Plasma Containing NiCl
- Author
-
Kensaku Kanomata, Takahiko Suzuki, Naoki Oyama, and Fumihiko Hirose
- Subjects
Capacitor ,Materials science ,Quality (physics) ,Nickel silicide ,law ,Metallurgy ,Plasma ,law.invention - Abstract
We have successfully fabricated nickelsilicide-metalgate MOS capacitors at a low temperature of 280åC by treating poly Si stacked SiO2/Si substrates with a Cl plasma containing NiCl. We have confirmed atomically sharp NiSi/oxide interfaces after the present process where any interface segregation can not be observed by cross-sectional TEM measurements. The present process allows a control of Ni concentration in the gate metal film and the work function in the gate metal is adjustable in the range from 4.3 to 4.9 eV, which is suitable for the Si CMOS process.
- Published
- 2008
32. Thermally annealed gamma irradiated Ni/4H-SiC Schottky barrier diode characteristics.
- Author
-
P. Vigneshwara Raja and N. V. L. Narasimha Murty
- Published
- 2019
- Full Text
- View/download PDF
33. Inducing defects in 3.3 kV SiC MOSFETs by annealing after ion implantation and evaluating their effect on bipolar degradation of the MOSFETs.
- Author
-
Kumiko Konishi, Ryusei Fujita, Yuki Mori, and Akio Shima
- Subjects
CRYSTAL defects ,METAL oxide semiconductor field-effect transistors ,SILICON carbide ,ANNEALING of crystals ,ION implantation - Abstract
Process-induced basal plane dislocations (BPDs) formed by annealing after aluminum ion implantation were investigated, and their effect on the bipolar degradation of body diodes in 3.3 kV SiC MOSFETs was evaluated. Contact resistance in the p+ region decreases with ion dose but increases with implantation temperature due to the formation of the recrystallized layer at SiC surface and difference of acceptor activation rates in high and low temperature implantation. In the case of high ion dose implantation at room temperature, contact resistance was of 1.3 × 10
−3 Ωcm2 . However, process-induced BPDs formed with high ion dose implantation at room temperature, and could be suppressed with low ion dose or high implantation temperature. They were formed after activation annealing, and expanded to form stacking faults (SFs) under both continuous irradiation from a Hg lamp and current stress. Bipolar degradation occurred in the case of MOSFETs fabricated using high ion dose implantation at room temperature, but was not observed in the case of either low ion dose or high implantation temperature. The activation energy for SF expansion velocity in the 〈1–100〉 direction was estimated to be 0.20 eV at a forward current density of 125 A cm−2 . Moreover, the results of a long duration current stress test with high current density and high junction temperature indicate that low ion dose or high implantation temperature can suppress the formation of process-induced BPDs. MOSFETs fabricated using optimized ion implantation conditions show high reliability under bipolar operation. [ABSTRACT FROM AUTHOR]- Published
- 2018
- Full Text
- View/download PDF
34. Flexible diodes for radio frequency (RF) electronics: a materials perspective.
- Author
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James Semple, Dimitra G Georgiadou, Gwenhivir Wyatt-Moon, Gerwin Gelinck, and Thomas D Anthopoulos
- Subjects
RADIO frequency identification systems ,WIRELESS communications ,SUBSTRATES (Materials science) ,ENERGY harvesting ,SEMICONDUCTOR diodes - Abstract
Over the last decade, there has been increasing interest in transferring the research advances in radiofrequency (RF) rectifiers, the quintessential element of the chip in the RF identification (RFID) tags, obtained on rigid substrates onto plastic (flexible) substrates. The growing demand for flexible RFID tags, wireless communications applications and wireless energy harvesting systems that can be produced at a low-cost is a key driver for this technology push. In this topical review, we summarise recent progress and status of flexible RF diodes and rectifying circuits, with specific focus on materials and device processing aspects. To this end, different families of materials (e.g. flexible silicon, metal oxides, organic and carbon nanomaterials), manufacturing processes (e.g. vacuum and solution processing) and device architectures (diodes and transistors) are compared. Although emphasis is placed on performance, functionality, mechanical flexibility and operating stability, the various bottlenecks associated with each technology are also addressed. Finally, we present our outlook on the commercialisation potential and on the positioning of each material class in the RF electronics landscape based on the findings summarised herein. It is beyond doubt that the field of flexible high and ultra-high frequency rectifiers and electronics as a whole will continue to be an active area of research over the coming years. [ABSTRACT FROM AUTHOR]
- Published
- 2017
- Full Text
- View/download PDF
35. Mit Strom und Silicium zum neuen Kilogramm.
- Abstract
Copyright of Nachrichten aus der Chemie is the property of Wiley-Blackwell and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)
- Published
- 2013
- Full Text
- View/download PDF
36. Kinetics and Thermodynamics of Amorphous Silicide Formation in Nickel/Amorphous-Silicon Multilayer Thin Films.
- Author
-
Clevenger, L.A., Thompson, C.V., de Avillez, R.R., and Tu, K.N.
- Published
- 1989
- Full Text
- View/download PDF
37. Creep Deformation of Ultrafine Grained Ni7 5B1 7Si8.
- Author
-
Nussbaum, Gilles and Ast, Dieter G.
- Published
- 1985
- Full Text
- View/download PDF
38. Kinetics and Thermodynamics of Amorphous Silicide Formation in Nickel/Amorphous-Silicon Multilayer Thin Films
- Author
-
L.A. Clevenger, C.V. Thompson, R.R. de Avillez, and K.N. Tu
- Subjects
inorganic chemicals ,otorhinolaryngologic diseases - Abstract
Cross-sectional transmission and scanning transmission electron microscopy and thermodynamic and kinetic analysis have been used to characterize amorphous and crystalline nickel silicide formation in nickel/amorphous-silicon multilayer thin films. An amorphous-nickelsilicide layer was formed between the nickel and amorphous-silicon layers during deposition. Heating caused crystalline Ni2Si to form at the nickel/amorphous-nickel-silicide interface. The composition of the amorphous-siicide was determined to be approximately 1 Ni atom to 1 Si atom. Thermodynamic analysis indicates that amorphous-nickel-silicide could be in equilibrium with nickel and amorphous-silicon if there were kinetic barriers to the formation of the crystalline silicides. Kinetic analysis indicates that the “nucleation surface energies” of the crystalline silicides, other than Ni3Si, must be 1.6 to 3.0 times larger than that of amorphous-nickel-silicide.
- Published
- 1989
39. Metal Impurities in Silicon- and Germanium-Based Technologies : Origin, Characterization, Control, and Device Impact
- Author
-
Cor Claeys, Eddy Simoen, Cor Claeys, and Eddy Simoen
- Subjects
- Metals--Inclusions, Semiconductors--Materials
- Abstract
This book provides a unique review of various aspects of metallic contamination in Si and Ge-based semiconductors. It discusses all of the important metals including their origin during crystal and/or device manufacturing, their fundamental properties, their characterization techniques and their impact on electrical devices'performance. Several control and possible gettering approaches are addressed. The book offers a valuable reference guide for all researchers and engineers studying advanced and state-of-the-art micro- and nano-electronic semiconductor devices and circuits. Adopting an interdisciplinary approach, it combines perspectives from e.g. material science, defect engineering, device processing, defect and device characterization, and device physics and engineering.
- Published
- 2018
40. Silicon Carbide and Related Materials 2014
- Author
-
Didier Chaussende, Gabriel Ferro, Didier Chaussende, and Gabriel Ferro
- Subjects
- Wide gap semiconductors--Materials--Technological innovations--Congresses, Wide gap semiconductors--Materials--Congresses, Silicon-carbide thin films--Congresses, Silicon carbide--Electric properties--Congresses, Silicon carbide--Congresses, Crystal growth--Congresses, Graphene--Congresses, Nitrides--Congresses
- Abstract
Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France
- Published
- 2015
41. Anisotropic Nanomaterials : Preparation, Properties, and Applications
- Author
-
Quan Li and Quan Li
- Subjects
- Nanostructured materials, Anisotropy
- Abstract
In this book anisotropic one-dimensional and two-dimensional nanoscale building blocks and their assembly into fascinating and qualitatively new functional structures embracing both hard and soft components are explained. Contributions from leading experts regarding important aspects like synthesis, assembly, properties and applications of the above materials are compiled into a reference book. The anisotropy, i.e. the direction-dependent physical properties, of materials is fascinating and elegant and has sparked the quest for anisotropic materials with useful properties. With such a curiosity, material scientists have ventured into the realm of nanometer length scale and have explored the anisotropic nanoscale building blocks such as metallic and nonmetallic particles as well as organic molecular aggregates. It turns out that the anisotropic nanoscale building blocks, in addition to direction-dependent properties, exhibit dimension and morphology dependence of physical properties. Moreover, ordered arrays of anisotropic nanoscale building blocks furnish novel properties into the resulting system which would be entirely different from the properties of individual ones. Undoubtedly, these promising properties have qualified them as enabling building blocks of 21st century materials science, nanoscience and nanotechnology. Readers will find this book professionally valuable and intellectually stimulating in the rapidly emerging area of anisotropic nanomaterials.Quan Li, Ph.D., is Director of the Organic Synthesis and Advanced Materials Laboratory at the Liquid Crystal Institute of Kent State University, where he is also Adjunct Professor in the Chemical Physics Interdisciplinary Program. He has directed researchprojects funded by US Air Force Research Laboratory (AFRL), US Air Force Office of Scientific Research (AFSOR), US Army Research Office (ARO), US Department of Defense Multidisciplinary University Research Initiative (DoD MURI), US National Science Foundation (NSF), US Department of Energy (DOE), US National Aeronautics and Space Administration (NASA), Ohio Third Frontier, and Samsung Electronics, among others.
- Published
- 2015
42. Electrodeposition and Surface Finishing : Fundamentals and Applications
- Author
-
Stojan S. Djokić and Stojan S. Djokić
- Subjects
- Coating processes, Electroplating
- Abstract
This volume of Modern Aspects of Electrochemistry has contributions from significant individuals in electrochemistry. This 7 chapter book discusses electrodeposition and the characterization of alloys and composite materials, the mechanistic aspects of lead electrodeposition, electrophoretic deposition of ceramic materials onto metal surfaces and the fundamentals of metal oxides for energy conversion and storage technologies. This volume also has a chapter devoted to the anodization of aluminum, electrochemical aspects of chemical and mechanical polishing, and surface treatments prior to metallization of semiconductors, ceramics, and polymers. This volume of Modern Aspects of Electrochemistry is ideal for scientists, researchers, engineers, and students interested in the latest findings in the field of electrodeposition and surface finishing.
- Published
- 2014
43. Chemistry in Microelectronics
- Author
-
Yannick Le Tiec and Yannick Le Tiec
- Subjects
- Microelectronics
- Abstract
Microelectronics is a complex world where many sciences need to collaborate to create nano-objects: we need expertise in electronics, microelectronics, physics, optics and mechanics also crossing into chemistry, electrochemistry, as well as biology, biochemistry and medicine. Chemistry is involved in many fields from materials, chemicals, gases, liquids or salts, the basics of reactions and equilibrium, to the optimized cleaning of surfaces and selective etching of specific layers. In addition, over recent decades, the size of the transistors has been drastically reduced while the functionality of circuits has increased. This book consists of five chapters covering the chemicals and sequences used in processing, from cleaning to etching, the role and impact of their purity, along with the materials used in “Front End Of the Line” which corresponds to the heart and performance of individual transistors, then moving on to the “Back End Of the Line” which is related to the interconnection of all the transistors. Finally, the need for specific functionalization also requires key knowledge on surface treatments and chemical management to allow new applications. Contents 1. Chemistry in the “Front End of the Line” (FEOL): Deposits, Gate Stacks, Epitaxy and Contacts, François Martin, Jean-Michel Hartmann, Véronique Carron and Yannick Le Tiec. 2. Chemistry in Interconnects, Vincent Jousseaume, Paul-Henri Haumesser, Carole Pernel, Jeffery Butterbaugh, Sylvain Maîtrejean and Didier Louis. 3. The Chemistry of Wet Surface Preparation: Cleaning, Etching and Drying, Yannick Le Tiec and Martin Knotter. 4. The Use and Management of Chemical Fluids in Microelectronics, Christiane Gottschalk, Kevin Mclaughlin, Julie Cren, Catherine Peyne and Patrick Valenti. 5. Surface Functionalization for Micro- and Nanosystems: Application to Biosensors, Antoine Hoang, Gilles Marchand, Guillaume Nonglaton, Isabelle Texier-Nogues and Francoise Vinet. About the Authors Yannick Le Tiec is a technical expert at CEA-Leti, Minatec since 2002. He is a CEA-Leti assignee at IBM, Albany (NY) to develop the advanced 14 nm CMOS node and the FDSOI technology. He held different technical positions from the advanced 300 mm SOI CMOS pilot line to different assignments within SOITEC for advanced wafer development and later within INES to optimize solar cell ramp-up and yield. He has been part of the ITRS Front End technical working group at ITRS since 2008.
- Published
- 2013
44. Intelligent Integrated Systems : Devices, Technologies, and Architectures
- Author
-
Simon Deleonibus and Simon Deleonibus
- Subjects
- Systems integration, Computer integrated manufacturing systems, Systems engineering
- Abstract
This book gives a state-of-the-art overview by internationally recognized researchers of the architectures of breakthrough devices required for future intelligent integrated systems. The first section highlights Advanced Silicon-Based CMOS Technologies. New device and functional architectures are reviewed in chapters on Tunneling Field-Effect Trans
- Published
- 2013
45. Handbook of Thin Film Deposition
- Author
-
Krishna Seshan and Krishna Seshan
- Subjects
- Thin film devices--Design and construction, Thin film devices--Design and construction--Handbooks, manuals, etc, Thin films
- Abstract
The Handbook of Thin Film Deposition is a comprehensive reference focusing on thin film technologies and applications used in the semiconductor industry and the closely related areas of thin film deposition, thin film micro properties, photovoltaic solar energy applications, new materials for memory applications and methods for thin film optical processes. In a major restructuring, this edition of the handbook lays the foundations with an up-to-date treatment of lithography, contamination and yield management, and reliability of thin films. The established physical and chemical deposition processes and technologies are then covered, the last section of the book being devoted to more recent technological developments such as microelectromechanical systems, photovoltaic applications, digital cameras, CCD arrays, and optical thin films. - A practical survey of thin film technologies aimed at engineers and managers involved in all stages of the process: design, fabrication, quality assurance and applications - Covers core processes and applications in the semiconductor industry and new developments in the photovoltaic and optical thin film industries - The new edition takes covers the transition taking place in the semiconductor world from Al/SiO2 to copper interconnects with low-k dielectrics - Written by acknowledged industry experts from key companies in the semiconductor industry including Intel and IBM - Foreword by Gordon E. Moore, co-founder of Intel and formulator of the renowned'Moore's Law'relating to the technology development cycle in the semiconductor industry
- Published
- 2012
46. Diffusion in Materials - DIMAT 2011
- Author
-
Igor Bezverkhyy, Sébastien Chevalier, Olivier Politano, Igor Bezverkhyy, Sébastien Chevalier, and Olivier Politano
- Subjects
- Materials--Congresses, Diffusion--Congresses
- Abstract
Selected, peer reviewed papers from the International Conference on Diffusion in Materials (DIMAT 2011), July 3-8, 2011, Dijon, France
- Published
- 2012
47. THERMEC 2009
- Author
-
T. Chandra, N. Wanderka, W. Reimers, M. Ionescu, T. Chandra, N. Wanderka, W. Reimers, and M. Ionescu
- Subjects
- Composite materials--Congresses, Materials--Congresses
- Abstract
THERMEC 2009, 6th International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS, Berlin, Germany, August 25-29, 2009
- Published
- 2010
48. Advanced Nanomedicine and Nanobiotechnology
- Author
-
Viroj Wiwanitkit and Viroj Wiwanitkit
- Subjects
- Biotechnology, Bioengineering, Nanomedicine, Nanotechnology
- Abstract
This book focuses on the nanomedicine and nanobiotechnology, a new scientific area. It specifically covers the clinical aspects, scientific aspects, and laboratory aspects relating to these new scientific views. It presents summative data from both nanomedicine and nanobiotechnology scientific community as well as additional metanalysis for important topics. This work is useful for medical personnel, scientists and practitioners who are not familiar to the new techniques.
- Published
- 2008
49. Gettering and Defect Engineering in Semiconductor Technology XII
- Author
-
Anna Cavallini, Hans Richter, Martin Kittler, Sergio Pizzini, Anna Cavallini, Hans Richter, Martin Kittler, and Sergio Pizzini
- Subjects
- Electrical engineering--Materials--Congresses, Semiconductors--Congresses, Getters--Congresses, Silicon crystals--Defects--Congresses
- Abstract
GADEST 2007Selected, peer reviewed papers from Gettering and Defect Engineering in Semiconductor Technology - GADEST 2007'held from 14th to 19th October 2007 in Italy at the EMFCSC
- Published
- 2008
50. Handbook of Semiconductor Manufacturing Technology
- Author
-
Yoshio Nishi, Robert Doering, Yoshio Nishi, and Robert Doering
- Subjects
- Semiconductors--Design and construction--Handb, Semiconductor industry--Handbooks, manuals, etc
- Abstract
Retaining the comprehensive and in-depth approach that cemented the bestselling first edition's place as a standard reference in the field, the Handbook of Semiconductor Manufacturing Technology, Second Edition features new and updated material that keeps it at the vanguard of today's most dynamic and rapidly growing field. Iconic experts Robert Doering and Yoshio Nishi have again assembled a team of the world's leading specialists in every area of semiconductor manufacturing to provide the most reliable, authoritative, and industry-leading information available.Stay Current with the Latest TechnologiesIn addition to updates to nearly every existing chapter, this edition features five entirely new contributions on…Silicon-on-insulator (SOI) materials and devices Supercritical CO2 in semiconductor cleaning Low-κ dielectrics Atomic-layer deposition Damascene copper electroplating Effects of terrestrial radiation on integrated circuits (ICs)Reflecting rapid progress in many areas, several chapters were heavily revised and updated, and in some cases, rewritten to reflect rapid advances in such areas as interconnect technologies, gate dielectrics, photomask fabrication, IC packaging, and 300 mm wafer fabrication.While no book can be up-to-the-minute with the advances in the semiconductor field, the Handbook of Semiconductor Manufacturing Technology keeps the most important data, methods, tools, and techniques close at hand.
- Published
- 2008
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