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BackgroundIn Japan, recently, the number of children with severe motor and intellectual disabilities (SMID) is steadily increasing. Caregivers such as parents and family members are struggling with how to live with their children at home and in the community after discharge.ObjectiveThe current study aimed to explore the social support needs faced by caregivers while rearing children with SMID in order to identify effective means of social support in Japan.MethodsWe conducted a cross-sectional survey of the primary caregivers of children with SMID at home through special-needs elementary, junior high, and senior high schools nationwide, using a self-administered, anonymous questionnaire to investigate the actual social support needs of the caregivers. All statements of social support need were coded using Krippendorff content analysis.ResultsQuestionnaire returns were obtained from 1,176 families, and the descriptions of 1,173 families were included in the analysis. The results of the analysis showed that the needs of the caregivers consisted of seven categories.ConclusionsThe social support needs expressed by the caregivers are necessary findings for Japan today, both for the soft side, such as the development of local systems and regulations to support these families, and for the hard side, such as the increase and improvement of facilities and equipment.

Abstract Background Families raising children with disabilities assume risks to their health and lives. Therefore, it is necessary to support these families to improve family empowerment, which is the ability of these families to control their own lives and to promote the collaborative raising of children with disabilities. This is the first online intervention program focusing on the empowerment of families raising children with disabilities who live at home in Japan. Method The program consists of four online peer-based group sessions. Moreover, the families engage in several activities in stages wherein they discover their own issues, find measures to resolve them, and take action, while visualizing interfamily relationships, including social resources, and the status of their family life, with facilitators and other peer members. This study is a non-randomized, waitlist-controlled trial. It compares the results of the intervention group (early group) and the waitlist-controlled group (delayed group). The participants are allocated to the early or delayed group in the order of their applications. The main outcome is family empowerment. Other outcomes are the caregiver burden, self-reported capability to use social resources, self-compassion, and the quality of life (QOL) of primary caregivers. The timeline of the online outcome evaluation is as follows: the initial evaluation (Time 1 [T1]) is conducted before the start of the first early group program, and post-intervention evaluation (Time 2 [T2]) is conducted immediately (within 1 week) after the early group completes all four sessions (4 weeks) of the program. Follow-up evaluation (Time 3 [T3]) is conducted 4 weeks after the post-intervention evaluation. This timing is the same in the delayed group, but the delayed group will attend the program after a 4-week waiting period, compared to the early group. Discussion The intention is to evaluate whether the provision of the program developed in this study and the evaluation test design are feasible and to verify the efficacy of this program. Trial registration The UMIN Clinical Trials Registry (UMIN000044172), registration date: May 19, 2021.

This study describes the selective formation process of highly degenerate n-type GaN (d-GaN) ohmic contacts for the source and drain regions of GaN high electron mobility transistors (HEMTs) using pulsed sputtering deposition (PSD). The selective formation process using SiO _2 masks and PSD epitaxial growth enabled the uniform formation of d-GaN in micron-meter size. The optimally formed d-GaN exhibited a minimum resistivity as low as 0.16 mΩ·cm, an electron concentration of 3.6 × 10 ^20 cm ^−3 , and a mobility of 108 cm ^2 V ^−1 s ^−1 . Transmission-line-method measurements demonstrated that the contact resistance of GaN HEMTs with d-GaN regrowth contacts was remarkably low at 0.28 Ω·mm, leading to the reasonable DC output characteristics with an on-resistance of 2.8 Ω·mm and a maximum current density of 850 mA mm ^−1 . These findings suggest that PSD epitaxial regrowth of d-GaN is a promising approach for the high-throughput formation of low-resistivity ohmic contacts on large-area GaN HEMT wafers.

BackgroundThe empowerment of families raising children with disabilities (CWD) is crucial in maintaining their health. We developed an evidence-based, family empowerment intervention program focusing on social resource utilization and reducing care burden.ObjectiveThis study aimed to determine the program's effectiveness in promoting family empowerment.MethodsWe compared an intervention group that started the online intervention program a week after initial evaluation and a group that received delayed intervention (waitlist-controlled group) at three time points: initial (T1), post-course (T2), and follow-up (T3). The required sample size was 52.ResultsThere were 60 participants who applied to the program. One participant dropped out due to scheduling issues, and the others were assigned to either the intervention group (n = 29) or the waitlist-controlled group (n = 30). Those who responded to the baseline questionnaire (T1: 26 from the intervention group; 29 from the waitlist-controlled group) comprised the final sample. Among them, 20 members of the intervention group and 20 of the waitlist-controlled group attended all four sessions (completion rates of 77% and 69%, respectively). The attendance rate for sessions 1–4 was 94%, 89%, 81%, and 83%, respectively. The participant numbers in each session ranged from 5 to 18 per month. The baseline outcome score did not differ between the groups. The primary outcome, family empowerment, measured using the family empowerment scale (FES), was significantly higher at T2 for the intervention group than in the waitlist-controlled group and was sustained in the sensitivity analysis. The intervention group's FES, in the family relationships (FA) and relationships with service systems (SS) subdomains, increased significantly, unlike involvement with the community (SP). The intervention group experienced lower care burden and higher self-compassion, especially in the isolation and over-identification items of the self-compassion scale-short form (SCS-SF). The intervention group's FES (total, FA, SS) and SCS-SF (total, common humanity, isolation) changed significantly between T1 and T2, and all, except common humanity, were sustained up to T3; this group's FES (SP) and SCS (negative score, over-identification) changed significantly between T1 and T3. The waitlist-controlled group's FES (total, FA) and SCS (total) changed significantly and were sustained between T2 and T3.ConclusionsThe developed intervention program promotes family empowerment in families of CWD.Clinical Trial RegistrationThis study is registered as a clinical trial in the UMIN Clinical Trials Registry (https://center6.umin.ac.jp/cgi-open-bin/ctr/ctr_view.cgi?recptno=R000050422, UMIN000044172).

Abstract Rudists are a group of bizarrely shaped marine bivalves that lived in the Tethys Ocean from the Late Jurassic to the latest Cretaceous. They are morphologically variable, including snail-like, cup-like, and horn-like shapes. In the Middle East, Cretaceous carbonates with rudists and rudist fragments are well exposed in many outcrops as well as oil and gas fields. For rudist-bearing carbonates in the subsurface, knowledge of rudist morphology and mode of occurrence must be derived from observation of drillcores; however, understanding the three-dimensional (3D) geometry of rudists from observation of core surfaces is difficult. In paleontological studies of rudists, X-ray computerized tomography (CT) scans have been carried out to reconstruct the inside texture of rudist shells for the purpose of taxonomic research. In contrast, in the oil and gas industry, application of X-ray CT scanning technology is generally focused on direct measurement of reservoir properties. Studies of rudist fossils within drillcores by means of X-ray CT have not yet been conducted. We have developed a new protocol to observe core interiors using X-ray CT. We obtained high-resolution 3D images of rudists in a drillcore by means of surface rendering, volume rendering, and 3D printing. X-ray CT and 3D modeling is a novel method for non-destructive analyses of the morphology and mode of occurrence of fossils within drillcores.

ScAlN has garnered substantial attention for its robust piezoelectric and ferroelectric properties, holding promise for diverse electronic device applications. However, the interplay between its structural attributes and physical properties remains poorly understood. This study systematically elucidates the structural characteristics of epitaxial ScAlN films grown on GaN by low-temperature sputtering. Correlations between Sc composition, lattice constants, and film strains were revealed utilizing high-resolution X-ray diffraction, reciprocal space mapping, and machine learning analyses. Our machine-learning model predicted c -axis lattice constants of ScAlN grown on GaN under various conditions and suggested that sputtering permits coherent growth over a wide compositional range. These findings advance the understanding of ScAlN and provide valuable insights for the research and development of novel ScAlN-based devices.

Abstract Stable carbon (δ13C) and oxygen isotope (δ18O) compositions of fossil brachiopod shells can be used to interpret paleoclimatic and paleoceanographic conditions. However, the initial isotopic composition of the living shells might be modified by diagenetic alteration. To assess the degree of this modification, we analyzed δ13C and δ18O and three common indicators of alteration in shells: minor element (manganese (Mn), iron (Fe), and strontium (Sr)) concentrations; cathodoluminescence (CL)/non-luminescence; and the shell microstructure of fossil Terebratalia coreanica and Laqueus rubellus (rhynchonellate brachiopod) shells from an exposure of conglomerates of the Tentokuji Formation (Pliocene, 3.85–2.75 Ma) in northeastern Japan. Two indices were used to quantify the preservation state of shell microstructure: the altered fiber ratio (AFR) and the altered fiber and puncta-filling cement ratio (AF-PCR). We qualified the degree of luminescence by measuring the mean cathodoluminescence index (MCLI), defined as the mean R values in a particular area of a CL image with RGB colors. The δ13C and δ18O values were negatively correlated with AFR or AF-PCR and MCLI. The sampling spots with high Mn and Fe concentrations also exhibited relatively low δ13C and δ18O. The δ13C and δ18O were more strongly correlated with Mn concentration than with Fe concentration. Therefore, of the three minor elements examined in this study, Mn concentration is the most reliable indicator of meteoric diagenesis in the studied shells. Unlike Mn and Fe concentrations, Sr concentrations in the modern and fossil brachiopod shells were similar, with overlapping ranges. This indicates that Sr concentration is not likely to be a good indicator of diagenetic alteration in the studied shells. Our study provides further evidence that multiple criteria should be applied and cross-checked when assessing diagenetic alteration of brachiopod shells.

Background Bispectral index (BIS) monitoring is a widely used non-invasive method to monitor the depth of anesthesia. However, in the event of surgeries requiring a frontal approach, placement of the electrode may be impossible at the designated area to achieve a proper BIS measurement. Methods We developed an investigational interface device to connect needle-electrodes to BIS sensors. The safety and clinical performance were investigated in patients who underwent surgery. Direct BIS values from a disposable BIS electrode and indirect values via the interface device were simultaneously recorded from the same areas of electrode placement in a single patient. The agreement between the direct and indirect BIS values was statistically analyzed. Results The interface device with a silver electrode demonstrated sufficient electric conduction to transmit electroencephalogram signals. The overall BIS curves were similar to those of direct BIS monitoring. Direct and indirect BIS values from 18 patients were statistically analyzed using a linear mixed model and a significant concordance was confirmed (indirect BIS = 7.0405 + 0.8286 * direct BIS, pConclusions The interface device provides an opportunity for intraoperative BIS monitoring of patients, whose clinical situation does not permit the placement of conventional adhesive sensors at the standard location.

Herein, we report the growth method of ultrathin indium nitride (InN) films on aluminum nitride (AlN) templates by sputtering and its application to field-effect transistors (FETs). Although island-like InN surfaces were formed at the initial film growth stage, the height of the islands on the surface could be controlled by changing the growth temperature. The height of the InN islands grown at 500 °C was lower than those grown at 440 °C and 480 °C. To demonstrate an application of the InN/AlN heterostructure to FETs, we fabricated FETs using a 2-nm-thick InN film grown on an AlN template. The FET with the InN channel grown at 500 °C exhibited a drain current density of 0.19 mA/mm and an on/off ratio of approximately 102 although the drain current of the FET with the InN grown at 450 °C was not adequately controlled by the gate bias. These results indicate that the growth condition of InN films is responsible for the characteristics of InN/AlN FETs.

Micro-LEDs have been attracting attention as a potential candidate for the next generation of display technology. Here we demonstrate the feasibility of large-area monolithic integration of multi-color InGaN micro-LEDs via pulsed sputtering deposition (PSD) and a standard photolithographical technique. The PSD allows for sequential epitaxial growth of blue and green InGaN LED stacks connected with the GaN based tunneling junction. The tunneling junctions serve as protective layers on p-type GaN against the dry etching damage and hole injection layers in each blue and green emission InGaN active layer. The tunneling junction-connected multi-color InGaN LED stack contributes to the high-density and large-area monolithic integration of RGB micro-LEDs using standard photolithography and the ICP-dry etching method.

Objectives: Family caregivers raising children with severe motor and intellectual disabilities (SMID) experience the enormous burden of care. The concept of family empowerment is one of the important assessment indexes of family nursing from the perspective of providing comprehensive support for these families. The objective of this study was to identify the factors associated with the empowerment of families raising a child with SMID in Japan. Methods: We conducted a nationwide questionnaire survey involving 1659 primary caregivers raising a child with SMID through 89 special schools. We assessed the main outcomes using the Family Empowerment Scale (FES). We then conducted a multiple linear regression analysis to reveal the factors associated with family empowerment. Results: In total, 1362 primary caregivers were included in our study. Our results show that factors contributing to high FES scores are higher age of the primary caregiver, higher education, greater recognition of regional support, lower childcare burden, higher utilization of home visit services, higher usage of a childcare institution, higher household income, and stronger family bonding. Conclusion: Healthcare professionals should carefully assess the state of family empowerment of the primary caregivers who are younger and those who have low education, low household income, high childcare burden, and fragile bonding with the family. Second, they should encourage such families to use regional support resources for childcare. That is, policy makers should consider ways to promote home visits and institutional services for the care of children with SMID, aiming especially for the provision of well-coordinated care and services. Keywords: Caregivers, Child care, Disabled children, Family empowerment, Home nursing, Intellectual disability, Japan, Social supports

Abstract GaN-based light-emitting diodes (LEDs) have been widely accepted as highly efficient solid-state light sources capable of replacing conventional incandescent and fluorescent lamps. However, their applications are limited to small devices because their fabrication process is expensive as it involves epitaxial growth of GaN by metal-organic chemical vapor deposition (MOCVD) on single crystalline sapphire wafers. If a low-cost epitaxial growth process such as sputtering on a metal foil can be used, it will be possible to fabricate large-area and flexible GaN-based light-emitting displays. Here we report preparation of GaN films on nearly lattice-matched flexible Hf foils using pulsed sputtering deposition (PSD) and demonstrate feasibility of fabricating full-color GaN-based LEDs. It was found that introduction of low-temperature (LT) grown layers suppressed the interfacial reaction between GaN and Hf, allowing the growth of high-quality GaN films on Hf foils. We fabricated blue, green, and red LEDs on Hf foils and confirmed their normal operation. The present results indicate that GaN films on Hf foils have potential applications in fabrication of future large-area flexible GaN-based optoelectronics.

Objectives: The families of these children experience distress both at the time of diagnosis and afterward. A top priority is to understand family empowerment, family function, and family members' quality of life (QoL) and to effectively support these families in Japan. The objective of this study was to assess the actual conditions of families living with children having DDs and to explore the factors associated with family empowerment and parents' QoL. Methods: We surveyed ninety-three parents (78 mothers, 15 fathers) from 78 families which lived with children with DDs in the capital region of Japan. We assessed two main outcomes using the Japanese versions of the following instruments: Family Empowerment Scale (FES), World Health Organization Quality of Life 26 (WHOQOL26), and other six outcomes. Correlation and multiple regression analyses were conducted. Results: No medication, cooperation with child rearing, assistance from a developmental support center, solved problems related to child rearing, and higher scores in Problem Solving contributed to higher FES scores. Higher WHOQOL26 scores were related to being a full-time housewife, higher self-esteem, no developmental support, a broad emotional support network, higher scores in Problem Solving and Role Function, and lower scores in Affective Reaction and General Function. Conclusions: We revealed that family empowerment and QoL of parents rearing children with DDs in Japan were affected by various subscales of family function and other family attributes. Effective interventions for improving family empowerment and QoL should be researched in the future. Keywords: Developmental disabilities, Family empowerment, Japan, Multiple regression analysis, Quality of life, Social support

We have grown structurally high-quality GaN with a low residual shallow donor concentration (

The Si-doped AlN films were grown on sapphire (0001) by pulsed sputtering deposition (PSD), and their structural and electrical properties were investigated. A combination of PSD and high-temperature annealing process enabled the growth of high-quality AlN (0001) epitaxial films on sapphire (0001) substrates with atomically flat stepped and terraced surfaces. The transmission electron microscopy observations revealed that the majority of the threading dislocations in AlN belonged to the mixed- or edge-type, with densities of 2.8 × 108 and 4.4 × 109 cm−2, respectively. The Si-doping of AlN by PSD yielded a clear n-type conductivity with a maximum electron mobility of 44 cm2 V−1 s−1, which was the highest value reported for AlN that was grown on sapphire. These results clearly demonstrated the strong potential of the PSD technique for growing high-quality conductive n-type AlN on sapphire.

We report a systematic investigation of the transport properties of highly degenerate electrons in Ge-doped and Si-doped GaN epilayers prepared using the pulsed sputtering deposition (PSD) technique. Secondary-ion mass spectrometry and Hall-effect measurements revealed that the doping efficiency of PSD n-type GaN is close to unity at electron concentrations as high as 5.1 × 1020 cm−3. A record low resistivity for n-type GaN of 0.16 mΩ cm was achieved with an electron mobility of 100 cm2 V−1 s−1 at a carrier concentration of 3.9 × 1020 cm−3. We explain this unusually high electron mobility of PSD n-type GaN within the framework of conventional scattering theory by modifying a parameter related to nonparabolicity of the conduction band. The Ge-doped GaN films show a slightly lower electron mobility compared with Si-doped films with the same carrier concentrations, which is likely a consequence of the formation of a small number of compensation centers. The excellent electrical properties presented in this letter clearly demonstrate the striking advantages of the low-temperature PSD technique for growing high-quality and highly conductive n-type GaN.

We demonstrated the crystal growth of wafer-scale hexagonal boron nitride (hBN) films on AlN template substrates by pulsed sputtering deposition using Fe catalysts. It was found that hBN films with high crystalline quality were formed at the hetero-interfaces between the Fe catalytic layers and the AlN templates. The full width at half maximum value of the E2g Raman spectrum for the hBN film was as small as 5.1 cm−1. The hBN film showed a highly c-axis-oriented structure and a strong near-band-edge deep ultraviolet emission at room temperature. The present results indicate that the sputter synthesis of hBN films via interface segregation opens a new pathway for the wafer-scale production of high-quality hBN films, and we envisage its potential applications in the fabrication of prospective hBN-based optoelectronic devices.

High-quality N-polar GaN epitaxial films with an atomically flat surface were grown on sapphire (0001) via pulsed sputtering deposition, and their structural and electrical properties were investigated. The crystalline quality of N-polar GaN improves with increasing film thickness and the full width at half maximum values of the x-ray rocking curves for 0002 and 101¯2 diffraction were 313 and 394 arcsec, respectively, at the film thickness of 6μm. Repeatable p-type doping in N-polar GaN films was achieved using Mg dopant, and their hole concentration and mobility can be controlled in the range of 8 × 1016–2 × 1018 cm−3 and 2–9 cm2V−1s−1, respectively. The activation energy of Mg in N-polar GaN based on a temperature-dependent Hall measurement was estimated to be 161 meV, which is comparable to that of the Ga-polar GaN. Based on these results, we demonstrated the fabrication of N-polar InGaN-based light emitting diodes with the long wavelength up to 609 nm.

We have grown Mg-doped GaN films with low residual hydrogen concentration using a low-temperature pulsed sputtering deposition (PSD) process. The growth system is inherently hydrogen-free, allowing us to obtain high-purity Mg-doped GaN films with residual hydrogen concentrations below 5 × 1016 cm−3, which is the detection limit of secondary ion mass spectroscopy. In the Mg profile, no memory effect or serious dopant diffusion was detected. The as-deposited Mg-doped GaN films showed clear p-type conductivity at room temperature (RT) without thermal activation. The GaN film doped with a low concentration of Mg (7.9 × 1017 cm−3) deposited by PSD showed hole mobilities of 34 and 62 cm2 V−1 s−1 at RT and 175 K, respectively, which are as high as those of films grown by a state-of-the-art metal-organic chemical vapor deposition apparatus. These results indicate that PSD is a powerful tool for the fabrication of GaN-based vertical power devices.

We grew In-rich InxGa1-xN films on yttria-stabilized zirconia (YSZ) substrates at low temperatures by pulsed sputtering deposition. It was found that single-crystal InxGa1-xN (0.63 ≤ x ≤ 0.82) films can be prepared without significant compositional fluctuations at growth temperatures below 500 °C. It was also found that the electrical properties of InGaN are strongly dependent on In composition, growth temperature, and film polarity. N-channel operation of the metal–insulator–semiconductor field-effect transistor (MISFET) with an ultrathin InGaN channel on the YSZ substrates was successfully demonstrated. These results indicate that an InGaN-based MISFET is a promising device for next-generation high-speed electronics. [ABSTRACT FROM AUTHOR]