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We present a self-consistent modelfor the Zeldovich nucleationrate that determines the nucleation probabilities, growth rates, andeven the preferred crystal structure of Au-catalyzed III–Vnanowires fabricated by the vapor–liquid–solid growthmethod. The obtained expression accounts for the nucleation kineticsin ternary Au–III–V alloys and shows that the nucleationrate in vapor–liquid–solid nanowires is proportionalto the As concentration, As diffusion coefficient in the droplet,and activity of solid GaAs. The leading exponential term of the nucleationrate is modified due to the self-consistency renormalization. As aresult, the behavior of the effective nucleation barrier versus Gaconcentration is changed significantly with respect to the commonlyused expression. This strongly affects the values of Ga concentrationsduring growth which are obtained within the self-consistent approachwith the known nanowire elongation rates. In turn, the renormalizednucleation rates change the predictions regarding the zincblende–wurtzitephase transitions in III–V nanowires. In particular, our calculationsshow why the Au-catalyzed GaAs nanowires grown by molecular beam epitaxyat 550 °C are predominantly wurtzite, while the high temperaturehydride vapor phase epitaxy at 715 °C yields pure zincblendecrystal structure. We also obtain useful estimates for the As diffusioncoefficients in ternary Au–Ga–As liquids at differentconditions. [ABSTRACT FROM AUTHOR]

Innovative methods for substrate patterning provide intriguing possibilities for the development of devices based on ordered arrays of semiconductor nanowires. Control over the nanostructures' morphology in situ can be obtained via extensive theoretical studies of their formation. In this paper, we carry out an investigation of the ordered nanowires' formation kinetics depending on the growth mask geometry. Diffusion equations for the growth species on both substrate and nanowire sidewalls depending on the spacing arrangement of the nanostructures and deposition rate are considered. The value of the pitch corresponding to the maximum diffusion flux from the substrate is obtained. The latter is assumed to be the optimum in terms of the nanowire elongation rate. Further study of the adatom kinetics demonstrates that the temporal dependence of a nanowire's length is strongly affected by the ratio of the adatom's diffusion length on the substrate and sidewalls, providing insights into the proper choice of a growth wafer. The developed model allows for customization of the growth protocols and estimation of the important diffusion parameters of the growth species. [ABSTRACT FROM AUTHOR]

Atmospheric pressure microplasma is a simple, cost-effective, efficient, and eco-friendly procedure, which is superior to the traditional nanomaterials synthesis techniques. It generates high yields and allows for a controlled growth rate and morphology of nanomaterials. The silver (Ag) nanomaterials, with their unique physical and chemical properties, exhibit outstanding antibacterial and antifungal properties. Similarly, zinc oxide (ZnO) nanomaterials, known for their low toxicity and relatively lower cost, find wide applications in wound repair, bone healing, and antibacterial and anticancer applications. The use of core–shell nanomaterials in certain situations where some nanoparticles can cause serious harm to host tissues or organs is a testament to their potential. A benign material is coated over the core to reduce toxicity in these cases. This review compares the numerous configurations of microplasma systems used for synthesizing nanomaterials and their use in producing Ag, ZnO, and their core–shell (Ag-ZnO) nanomaterials for biomedical applications. The summary also includes the effect of control parameters, including cathode diameter, gas flow rate, precursor concentration, voltage, and current, on the nanomaterial's characteristics and applications. In addition, it provides a research gap in the synthesis of Ag, ZnO, and core–shell nanomaterials by this technique, as well as the development and limitations of this technique and the use of these nanoparticles for biomedical applications. [ABSTRACT FROM AUTHOR]

The optical properties of quantum dot arrays in the MBE-grown InAs/GaAs(100) epitaxial system with an effective InAs layer thickness of 1.9 monolayers were studied in samples exposed to the beam of As4 for various times after switching off the In beam. The results of photoluminescence measurements showed that the emission wavelength increased with the exposure time within certain limits. This behavior agrees with predictions of the kinetic model of the initial stage of quantum dot formation. [ABSTRACT FROM AUTHOR]

Ensembles of InAs quantum dots formed at the GaAs(100) surface have been studied by the methods of reflection high-energy electron diffraction and photoluminescence. The amount of deposited InAs corresponds to a wetting layer thickness smaller than the critical value necessary for the transition from two- to three-dimensional growth. It is experimentally shown that, at a deposited film thickness of 1.5 and 1.6 monolayers, islands are formed after keeping the sample in a flow of As[sub 4] . The influence of the substrate temperature on the kinetic characteristics of the formation of InAs/GaAs islands has been studied. © 2003 MAIK “Nauka / Interperiodica”. [ABSTRACT FROM AUTHOR]

A new model for the radial growth of self-catalyzed III-V nanowires on different substrates is presented, which describes the nanowire morphological evolution without any free parameters. The model takes into account the re-emission of group III atoms from a mask surface and the shadowing effect in directional deposition techniques such as molecular beam epitaxy. It is shown that radial growth is faster for larger pitches of regular nanowire arrays or lower surface density, and can be suppressed by increasing the V/III flux ratio or decreasing re-emission. The model describes quite well the data on the morphological evolution of Ga-catalyzed GaP and GaAs nanowires on different substrates, where the nanowire length increases linearly and the radius enlarges sub-linearly with time. The obtained analytical expressions and numerical data should be useful for morphological control over different III-V nanowires in a wide range of growth conditions. [ABSTRACT FROM AUTHOR]

Compositional control over vapor–liquid–solid III–V ternary nanowires based on group V intermix (VLS IIIVxV1−x NWs) is complicated by the presence of a catalyst droplet with extremely low and hence undetectable concentrations of group V atoms. The liquid–solid and vapor–solid distributions of IIIVxV1−x NWs at a given temperature are influenced by the kinetic parameters (supersaturation and diffusion coefficients in liquid, V/III flux ratio in vapor), temperature and thermodynamic constants. We analyze the interplay of the kinetic and thermodynamic factors influencing the compositions of VLS IIIVxV1−x NWs and derive a new vapor–solid distribution that contains only one parameter of liquid, the ratio of the diffusion coefficients of dissimilar group V atoms. The unknown concentrations of group V atoms in liquid have no influence on the NW composition at high enough levels of supersaturation in liquid. The simple analytic shape of this vapor–solid distribution is regulated by the total V/III flux ratio in vapor. Calculating the temperature-dependent desorption rates, we show that the purely kinetic regime of the liquid–solid growth occurs for VLS IIIVxV1−x NWs in a wide range of conditions. The model fits the data well on the vapor–solid distributions of VLS InPxAs1−x and GaPxAs1−x NWs and can be used for understanding and controlling the compositions of any VLS IIIVxV1−x NWs, as well as modeling the compositional profiles across NW heterostructures in different material systems. [ABSTRACT FROM AUTHOR]

This paper presents the results of research on conductive layers dedicated to flexible photovoltaic cells based on semiconductors integrated with a textile substrate. The presented work is part of a broader project aimed at producing flexible solar cells based on the CdTe semiconductor component and manufactured directly on textiles. The research focuses on the selection of textile substrates and contact materials, as well as the methods of their application. This study compares three types of fabrics (basalt, glass, and silicone fibers) and three metals (copper, molybdenum, and silver), evaluating their mechanical and electrical properties. During the experiments, flexible metallic layers with a thickness ranging from 160 to 415 nm were obtained. Preliminary experiments indicated that metallic layers deposited directly on textiles do not provide adequate conductivity, reaching the levels of several hundred Ω/sq and necessitating the introduction of intermediate layers, such as screen-printed graphite. The results show that molybdenum layers on basalt fabrics exhibit the lowest increase in resistance after dynamic bending tests. The obtained relative resistance changes in Mo layers varied from 50% to as low as 5% after a complete set of 200 bending cycles. This article also discusses current challenges and future research directions in the field of textile-integrated photovoltaics, emphasizing the importance of further technological development to improve the energy efficiency and durability of such solutions. [ABSTRACT FROM AUTHOR]

Due to the very efficient relaxation of elastic stress on strain-free sidewalls, III–V nanowires offer almost unlimited possibilities for bandgap engineering in nanowire heterostructures by using material combinations that are attainable in epilayers. However, axial nanowire heterostructures grown using the vapor–liquid–solid method often suffer from the reservoir effect in a catalyst droplet. Control over the interfacial abruptness in nanowire heterostructures based on the group V interchange is more difficult than for group-III-based materials, because the low concentrations of highly volatile group V atoms cannot be measured after or during growth. Here, we develop a self-consistent model for calculations of the coordinate-dependent compositional profiles in the solid and liquid phases during the vapor–liquid–solid growth of the axial nanowire heterostructure  A x 0 B 1 − x 0 C / A x 1 B 1 − x 1 C  with any stationary compositions  x 0  and  x 1 . The only assumption of the model is that the growth rates of both binaries AC and BC are proportional to the concentrations of group V atoms A and B in a catalyst droplet, requiring high enough supersaturations in liquid phase. The model contains a minimum number of parameters and fits quite well the data on the interfacial abruptness across double heterostructures in GaP/GaAsxP1−x/GaP nanowires. It can be used for any axial III–V nanowire heterostructures obtained through the vapor–liquid–solid method. It forms a basis for further developments in modeling the complex growth process and suppression of the interfacial broadening caused by the reservoir effect. [ABSTRACT FROM AUTHOR]

Alzheimer's disease (AD) is a progressive neurodegenerative disease characterized by the accumulation of amyloid beta (Aβ) plaques in the brain. Aβ1–42 is the main component of Aβ plaque, which is toxic to neuronal cells. Si nanowires (Si NWs) have the advantages of small particle size, high specific surface area, and good biocompatibility, and have potential application prospects in suppressing Aβ aggregation. In this study, we employed the vapor–liquid–solid (VLS) growth mechanism to grow Si NWs using Au nanoparticles as catalysts in a plasma-enhanced chemical vapor deposition (PECVD) system. Subsequently, these Si NWs were transferred to a phosphoric acid buffer solution (PBS). We found that Si NWs significantly reduced cell death in PC12 cells (rat adrenal pheochromocytoma cells) induced by Aβ1–42 oligomers via double staining with 3-(4,5-dimethylthiazol-2-yl)-2,5-diphenyltetrazolium bromide (MTT) and fluorescein diacetate/propyl iodide (FDA/PI). Most importantly, pre-incubated Si NWs largely prevented Aβ1–42 oligomer-induced PC12 cell death, suggesting that Si NWs exerts an anti-Aβ neuroprotective effect by inhibiting Aβ aggregation. The analysis of Fourier Transform Infrared (FTIR) results demonstrates that Si NWs reduce the toxicity of fibrils and oligomers by intervening in the formation of β-sheet structures, thereby protecting the viability of nerve cells. Our findings suggest that Si NWs may be a potential therapeutic agent for AD by protecting neuronal cells from the toxicity of Aβ1–42. [ABSTRACT FROM AUTHOR]

The atomic force microscope is a versatile tool for assessing the topography, friction, and roughness of a broad spectrum of surfaces, encompassing anti-bacterial nanostructure arrays. Measuring and comparing all these values with one instrument allows clear comparisons of many nanomechanical reactions and anomalies. Increasing nano-Newton-level forces through the cantilever tip allows for the testing and measuring of failure points, damage behavior, and functionality under unfavorable conditions. Subjecting a grade 5 titanium alloy to hydrothermally etched nanostructures while applying elevated cantilever tip forces resulted in the observation of irreversible damage through atomic force microscopy. Despite the damage, a rough and non-uniform morphology remained that may still allow it to perform in its intended application as an anti-bacterial implant surface. Utilizing an atomic force microscope enables the evaluation of these surfaces before their biomedical application. [ABSTRACT FROM AUTHOR]

Control over the composition of III–V ternary nanowires grown by the vapor–liquid–solid (VLS) method is essential for bandgap engineering in such nanomaterials and for the fabrication of functional nanowire heterostructures for a variety of applications. From the fundamental viewpoint, III–V ternary nanowires based on group V intermix (InSbxAs1−x, InPxAs1−x, GaPxAs1−x and many others) present the most difficult case, because the concentrations of highly volatile group V atoms in a catalyst droplet are beyond the detection limit of any characterization technique and therefore principally unknown. Here, we present a model for the vapor–solid distribution of such nanowires, which fully circumvents the uncertainties that remained in the theory so far, and we link the nanowire composition to the well-controlled parameters of vapor. The unknown concentrations of group V atoms in the droplet do not enter the distribution, despite the fact that a growing solid is surrounded by the liquid phase. The model fits satisfactorily the available data on the vapor–solid distributions of VLS InSbxAs1−x, InPxAs1−x and GaPxAs1−x nanowires grown using different catalysts. Even more importantly, it provides a basis for the compositional control of III–V ternary nanowires based on group V intermix, and it can be extended over other material systems where two highly volatile elements enter a ternary solid alloy through a liquid phase. [ABSTRACT FROM AUTHOR]

We present the characterization of a pn-junction GaAs nanowire. For the characterization, current–voltage, electron-beam-induced current, cathodoluminescence, and electron holography measurements are used. We show that by combining information from these four methods, in combination with drift-diffusion modelling, we obtain a detailed picture of how the nanowire pn-junction is configured and how the recombination lifetime varies axially in the nanowire. We find (i) a constant doping concentration and 600 ps recombination lifetime in the n segment at the top part of the nanowire; (ii) a 200–300 nm long gradient in the p doping next to the pn-junction; and (iii) a strong gradient in the recombination lifetime on the p side, with 600 ps lifetime at the pn-junction, which drops to 10 ps at the bottom of the p segment closest to the substrate. We recommend such complementary characterization with multiple methods for nanowire-based optoelectronic devices. [ABSTRACT FROM AUTHOR]

The step-flow and spiral growth of a multicomponent crystal are considered from vapors, taking into account the different possible Schwoebel barriers for each component within the Burton-Cabrera-Frank model. Analytic expressions for the final growth rates of such a multicomponent crystal are determined while considering the kinetic properties of all the individual components and growth conditions. Possible instabilities inherent in the presence of several components are studied, and a stability criterion for the multicomponent case is proposed. It is shown that, in certain cases, nucleation of nanoislands of pure components behind the moving steps can initiate, significantly distorting the growth process. The criterion for the occurrence of such an unstable regime is found. [ABSTRACT FROM AUTHOR]

Wearable electronics is a technology that closely integrates electronic devices with the human body or clothing, which can realize human–computer interaction, health monitoring, smart medical, and other functions. Wearable physical sensors are an important part of wearable electronics. They can sense various physical signals from the human body or the surrounding environment and convert them into electrical signals for processing and analysis. Nanowires (NW) have unique properties such as a high surface-to-volume ratio, high flexibility, high carrier mobility, a tunable bandgap, a large piezoresistive coefficient, and a strong light–matter interaction. They are one of the ideal candidates for the fabrication of wearable physical sensors with high sensitivity, fast response, and low power consumption. In this review, we summarize recent advances in various types of NW-based wearable physical sensors, specifically including mechanical, photoelectric, temperature, and multifunctional sensors. The discussion revolves around the structural design, sensing mechanisms, manufacture, and practical applications of these sensors, highlighting the positive role that NWs play in the sensing process. Finally, we present the conclusions with perspectives on current challenges and future opportunities in this field. [ABSTRACT FROM AUTHOR]

Coalescence of nanowires and other three-dimensional structures into continuous film is desirable for growing low-dislocation-density III-nitride and III-V materials on lattice-mismatched substrates; this is also interesting from a fundamental viewpoint. Here, we develop a growth model for vertical nanowires which, under rather general assumptions on the solid-like coalescence process within the Kolmogorov crystallization theory, results in a morphological diagram for the asymptotic coverage of a substrate surface. The coverage is presented as a function of two variables: the material collection efficiency on the top nanowire facet a and the normalized surface diffusion flux of adatoms from the NW sidewalls b . The full coalescence of nanowires is possible only when a = 1 , regardless of b . At a > 1 , which often holds for vapor–liquid–solid growth with a catalyst droplet, nanowires can only partly merge but never coalesce into continuous film. In vapor phase epitaxy techniques, the NWs can partly merge but never fully coalesce, while in the directional molecular beam epitaxy the NWs can fully coalesce for small enough contact angles of their droplets corresponding to a = 1 . The growth kinetics of nanowires and evolution of the coverage in the pre-coalescence stage is also considered. These results can be used for predicting and controlling the degree of surface coverage by nanowires and three-dimensional islands by tuning the surface density, droplet size, adatoms diffusivity, and geometry of the initial structures in the vapor–liquid–solid, selective area, or self-induced growth by different epitaxy techniques. [ABSTRACT FROM AUTHOR]

Vertically free-standing nanowires, synthesized through vapor-based growth, can undergo changes in their growth directions known as kinking. These alterations can significantly influence the physical and chemical properties of nanowires, thereby expanding their potential applications. The occurrence of kinks is commonly associated with variations in vapor, temperature, seed, and/or their combinations. However, the interplay among different growth factors complicates the identification of the dominating factor and, consequently, limits precise control over nanowire morphology. Theoretical models, incorporating factors like supersaturation, wetting angle, nanowire size, and surface/interface energies tied to growth conditions, have been developed to describe and predict kinking during nanowire growth. While a few pivotal parameters, such as surface/interface energies and wetting angles, can be subtly adjusted through minor alterations in growth conditions, accurately predicting the occurrence of kinks remains a practical challenge. Conversely, in the present review, we attempted to elucidate connections between microscopic aspects, such as changes in composition and the formation of defects, and the nucleation and progression of kinks. This effort aims to construct a predictive framework that enhances our understanding of the tendencies in nanowire growth. [ABSTRACT FROM AUTHOR]

GaN nanowires grown on metal substrates have attracted increasing interest for a wide range of applications. Herein, we report GaN nanowires grown by plasma-assisted molecular beam epitaxy on thin polycrystalline ZrN buffer layers, sputtered onto Si(111) substrates. The nanowire orientation was studied by X-ray diffraction and scanning electron microscopy, and then described within a model as a function of the Ga beam angle, nanowire tilt angle, and substrate rotation. We show that vertically aligned nanowires grow faster than inclined nanowires, which leads to an interesting effect of geometrical selection of the nanowire orientation in the directional molecular beam epitaxy technique. After a given growth time, this effect depends on the nanowire surface density. At low density, the nanowires continue to grow with random orientations as nucleated. At high density, the effect of preferential growth induced by the unidirectional supply of the material in MBE starts to dominate. Faster growing nanowires with smaller tilt angles shadow more inclined nanowires that grow slower. This helps to obtain more regular ensembles of vertically oriented GaN nanowires despite their random position induced by the metallic grains at nucleation. The obtained dense ensembles of vertically aligned GaN nanowires on ZrN/Si(111) surfaces are highly relevant for device applications. Importantly, our results are not specific for GaN nanowires on ZrN buffers, and should be relevant for any nanowires that are epitaxially linked to the randomly oriented surface grains in the directional molecular beam epitaxy. [ABSTRACT FROM AUTHOR]