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Hexagonal boron nitride (h-BN) is brittle, however, its atomic-scale structural engineering can lead to unprecedented physical properties. Here we report the bulk synthesis of high-density crystalline h-BN solids by using high-temperature spark plasma sintering (SPS) of micron size h-BN powders. In addition to the high mechanical strength and ductile response of such materials, we have obtained anomalous values of dielectric constant beyond theoretical limits, high thermal conductivity, and exceptional neutron radiation shielding capability. Through exhaustive characterizations we reveal that SPS induces non-basal plane crystallinity, twisting of layers, and facilitates inter-grain fusion with a high degree of in-plane alignment across macroscale dimensions, resulting in near-theoretical density and anomalous properties. Our findings highlight the importance of material design, via new approaches such as twisting and interconnections between atomically thin layers, to create novel ceramics with properties that could go beyond their intrinsic theoretical predictions., Comment: Authors revised version, 46 pages, 4 figures

Heterostructures based on ultrawide-bandgap (UWBG) semiconductors (bandgap >4.0 eV), boron nitride (BN) and diamond are important for next-generation high-power electronics. However, in-situ hetero-epitaxy of BN/diamond or vice-versa remains extremely challenging, due to their non-trivial growth kinetics. Here, we have grown BN thin film on (100) single crystal diamond by pulsed laser deposition and investigated its structural and magnetic properties, optical refractive index, and thermal conductivity. Structural characterizations confirm the mixed (stable hexagonal and metastable cubic) phase growth. Film shows diamagnetic behavior at room temperature. It displays anisotropic refractive index within the visible-to-near-infrared wavelength range. The room temperature cross-plane thermal conductivity of BN is ~1.53 W/(mK), and the thermal conductance of the BN/diamond interface is ~20 MW/(m2K). Our findings are useful for various device related applications based on UWBG BN/diamond heterostructures., Comment: 16 pages, 4 figures

Understanding the emergent electronic structure in twisted atomically thin layers has led to the exciting field of twistronics. However, practical applications of such systems are challenging since the specific angular correlations between the layers must be precisely controlled and the layers have to be single crystalline with uniform atomic ordering. Here, we suggest an alternative, simple and scalable approach where nanocrystalline two-dimensional (2D) film on three-dimensional (3D) substrates yield twisted-interface-dependent properties. Ultrawide-bandgap hexagonal boron nitride (h-BN) thin films are directly grown on high in-plane lattice mismatched wide-bandgap silicon carbide (4H-SiC) substrates to explore the twist-dependent structure-property correlations. Concurrently, nanocrystalline h-BN thin film shows strong non-linear second-harmonic generation and ultra-low cross-plane thermal conductivity at room temperature, which are attributed to the twisted domain edges between van der Waals stacked nanocrystals with random in-plane orientations. First-principles calculations based on time-dependent density functional theory manifest strong even-order optical nonlinearity in twisted h-BN layers. Our work unveils that directly deposited 2D nanocrystalline thin film on 3D substrates could provide easily accessible twist-interfaces, therefore enabling a simple and scalable approach to utilize the 2D-twistronics integrated in 3D material devices for next-generation nanotechnology., Comment: 33 pages, 4 figures

Boron nitride (BN) is an exceptional material and among its polymorphs, two-dimensional (2D) hexagonal and three-dimensional (3D) cubic BN (h-BN and c-BN) phases are most common. The phase stability regimes of these BN phases are still under debate and phase transformations of h-BN/c-BN remain a topic of interest. Here, we investigate the phase stability of 2D/3D h-BN/c-BN nanocomposites and show that the co-existence of two phases can lead to strong non-linear optical properties and low thermal conductivity at room temperature. Furthermore, spark-plasma sintering of the nanocomposite shows complete phase transformation to 2D h-BN with improved crystalline quality, where 3D c-BN grain sizes governs the nucleation and growth kinetics. Our demonstration might be insightful in phase engineering of BN polymorphs based nanocomposites with desirable properties for optoelectronics and thermal energy management applications., Comment: 29 pages, 5 figures

A simple model for QCD dynamics in which the DGLAP integro-differential equation may be solved analytically has been considered in our previous papers arXiv:1611.08787 [hep-ph] and arXiv:1906.07924 [hep-ph]. When such a model contains only one term in the splitting function of the dominant parton distribution, then Bessel function appears to be the solution to this simplified DGLAP equation. To our knowledge, this model with only one term in the splitting function for the first time has been proposed by Blumlein in hep-ph/9506403. In arXiv:1906.07924 [hep-ph] we have shown that a dual integro-differential equation obtained from the DGLAP equation by a complex map in the plane of the Mellin moment in this model may be considered as the BFKL equation. Then, in arXiv:1906.07924 we have applied a complex diffeomorphism to obtain a standard integral from Gradshteyn and Ryzhik tables starting from the contour integral for parton distribution functions that is usually taken by calculus of residues. This standard integral from these tables appears to be the Laplace transformation of Jacobian for this complex diffeomorphism. Here we write up all the formulae behind this trick in detail and find out certain important points for further development of this strategy. We verify that the inverse Laplace transformation of the Laplace image of the Bessel function may be represented in a form of Barnes contour integral., Comment: 14 pages

We consider a simple model for QCD dynamics in which DGLAP integro-differential equation may be solved analytically. This is a gauge model which possesses dominant evolution of gauge boson (gluon) distribution and in which the gauge coupling does not run. This may be ${\cal N} =4$ supersymmetric gauge theory with softly broken supersymmetry, other finite supersymmetric gauge theory with lower level of supersymmetry, or topological Chern-Simons field theories. We maintain only one term in the splitting function of unintegrated gluon distribution and solve DGLAP analytically for this simplified splitting function. The solution is found by use of the Cauchy integral formula. The solution restricts form of the unintegrated gluon distribution as function of momentum transfer and of Bjorken $x$. Then we consider an almost realistic splitting function of unintegrated gluon distribution as an input to DGLAP equation and solve it by the same method which we have developed to solve DGLAP equation for the toy-model. We study a result obtained for the realistic gluon distribution and find a singular Bessel-like behaviour in the vicinity of the point $x=0$ and a smooth behaviour in the vicinity of the point, Comment: 32 pages