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Mixing Insulating Commodity Polymers with Semiconducting n‐type Polymers Enables High‐Performance Electrochemical Transistors

Authors :
Zeglio, Erica
Wang, Yazhou
Jain, Saumey
Lin, Yunfan
Avila Ramirez, Alan Eduardo
Feng, Kui
Guo, Xugang
Ose, Helena
Mozolevskis, Gatis
Mawad, Damia
Yue, Wan
Hamedi, Max Mahiar
Herland, Anna
Zeglio, Erica
Wang, Yazhou
Jain, Saumey
Lin, Yunfan
Avila Ramirez, Alan Eduardo
Feng, Kui
Guo, Xugang
Ose, Helena
Mozolevskis, Gatis
Mawad, Damia
Yue, Wan
Hamedi, Max Mahiar
Herland, Anna
Publication Year :
2024

Abstract

Diluting organic semiconductors with a host insulating polymer is used to increase the electronic mobility in organic electronic devices, such as thin film transistors, while considerably reducing material costs. In contrast to organic electronics, bioelectronic devices such as the organic electrochemical transistor (OECT) rely on both electronic and ionic mobility for efficient operation, making it challenging to integrate hydrophobic polymers as the predominant blend component. This work shows that diluting the n-type conjugated polymer p(N-T) with high molecular weight polystyrene (10 KDa) leads to OECTs with over three times better mobility-volumetric capacitance product (µC*) with respect to the pristine p(N-T) (from 4.3 to 13.4 F V−1 cm−1 s−1) while drastically decreasing the amount of conjugated polymer (six times less). This improvement in µC* is due to a dramatic increase in electronic mobility by two orders of magnitude, from 0.059 to 1.3 cm2 V−1 s−1 for p(N-T):Polystyrene 10 KDa 1:6. Moreover, devices made with this polymer blend show better stability, retaining 77% of the initial drain current after 60 minutes operation in contrast to 12% for pristine p(N-T). These results open a new generation of low-cost organic mixed ionic-electronic conductors where the bulk of the film is made by a commodity polymer.<br />QC 20240429

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1457577333
Document Type :
Electronic Resource
Full Text :
https://doi.org/10.1002.adma.202302624