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Capacitance-voltage studies on enhancement-mode InGaAs metal-oxide-semiconductor field-effect transistor using atomic-layer-deposited AI2O3 gate dielectric
- Source :
- Birck and NCN Publications
- Publication Year :
- 2006
-
Abstract
- Atomic layer deposition
Details
- Database :
- OAIster
- Journal :
- Birck and NCN Publications
- Notes :
- application/pdf
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1455862385
- Document Type :
- Electronic Resource