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Interface barriers at the interfaces of polar GaAs(111) faces with Al2O3

Authors :
Chou, H.Y.
O'Connor, E.
Hurley, P.K.
Afanas'ev, V.V.
Houssa, M.
Stesmans, A.
Ye, Peide
Newcomb, S.B.
Chou, H.Y.
O'Connor, E.
Hurley, P.K.
Afanas'ev, V.V.
Houssa, M.
Stesmans, A.
Ye, Peide
Newcomb, S.B.
Source :
Birck and NCN Publications
Publication Year :
2012

Abstract

Internal photoemission measurements of barriers for electrons at interfaces between GaAs(111) and atomic-layer deposited Al2O3 indicate that changing the GaAs polar crystal face orientation from the Ga-terminated (111)A to the As-terminated (111)B has no effect on the barrier height and remains the same as at the non-polar GaAs(100)/Al2O3 interface. Moreover, the presence of native oxide on GaAs(111) or passivation of this surface with sulphur also have no measurable influence on the GaAs(111)/Al2O3 barrier. These results suggest that the orientation and composition-sensitive surface dipoles conventionally observed at GaAs surfaces are effectively compensated at GaAs/oxide interfaces. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.3698461]

Details

Database :
OAIster
Journal :
Birck and NCN Publications
Notes :
application/pdf
Publication Type :
Electronic Resource
Accession number :
edsoai.on1455861327
Document Type :
Electronic Resource