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High peak power ultra-short pulse diode-pumped Yb:KGW lasers

Authors :
Mojabi, Puyan (Electrical and Computer Engineering) Lin, Francis (Physics and Astronomy) Piche, Michel (Physics, Universite Laval)
Major, Arkady (Electrical and Computer Engineering)
Akbari, Reza
Mojabi, Puyan (Electrical and Computer Engineering) Lin, Francis (Physics and Astronomy) Piche, Michel (Physics, Universite Laval)
Major, Arkady (Electrical and Computer Engineering)
Akbari, Reza
Publication Year :
2017

Abstract

Today, the development of a simple, compact and cost-effective laser source which is capable of generating powerful pulses is of importance for a variety of optical applications. The commercially available Yb:KGW laser crystal is a good candidate for high power regime due to its high thermal conductivity and for ultrashort pulse generation because of its broad gain bandwidth. First, the generation of watt-level sub-100 fs pulse generation was realized by using a quantum-dot semiconductor saturable absorber mirror (QD-SESAM) in a dual-action with the Kerr lensing effect. The high power laser was one of the highest among sub-100 fs diode-pumped bulk Yb-doped lasers. The laser also delivered the shortest pulses from monoclinic double tungstate crystals and also the most powerful in the sub-60 fs regime. Next, a watt-level pure Kerr-lens mode-locked (KLM) laser was realized for the first time with Yb:KGW laser crystal pumped by a multimode fibre-coupled laser diode.

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1442963432
Document Type :
Electronic Resource