Monolithic InAs QDs based active-passive integration for photonic integrated circuits

Authors :: Enderson, A.
Mishra, P.
Cao, Z.
Albeladi, F. T.
Gillgrass, S.
Ratiu, B-P.
Peng, N.
Tang, M.
Liu, H-Y.
Shutts, S.
Smowton, P. M.
Enderson, A.
Mishra, P.
Cao, Z.
Albeladi, F. T.
Gillgrass, S.
Ratiu, B-P.
Peng, N.
Tang, M.
Liu, H-Y.
Shutts, S.
Smowton, P. M.
Abstract: We demonstrated 20 nm relative blue shifted III-V passive waveguides monolithically integrated with InAs QDs active laser diode emitting at 1290 nm through selective area proton implantation and post-annealing method. This work is promising for low-loss monolithic Photonic Integrated Circuits.

Database :: OAIster
Notes :: application/pdf, Enderson, A. , Mishra, P. , Cao, Z. , Albeladi, F. T. , Gillgrass, S. , Ratiu, B-P., Peng, N., Tang, M., Liu, H-Y., Shutts, S. ORCID: https://orcid.org/0000-0001-6751-7790 and Smowton, P. M. ORCID: https://orcid.org/0000-0002-9105-4842 2023. Monolithic InAs QDs based active-passive integration for photonic integrated circuits. Presented at: 2023 IEEE Photonics Conference (IPC), 12-16 November 2023. Proceedings 2023 IEEE Photonics Conference (IPC). IEEE, 10.1109/IPC57732.2023.10360634 file , English
Publication Type :: Electronic Resource
Accession number :: edsoai.on1434480012
Document Type :: Electronic Resource

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