GaN Field Emitter Arrays with JA of 10 A/cm2 at VGE = 50 V for Power Applications

2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA
III-Nitrides are attractive as field emission devices for high frequency, high power, and harsh environment applications. A wet-based digital etching and a novel device geometry was used to demonstrate GaN vertical self-alignedgate (SAG) field emitter arrays (FEA) with uniform tips of sub- 10 nm tip radius. The best GaN FEA has a current density (JA) of 10 A/cm2 at VGE = 50 V, which is better than the state-of-the-art Si field emitter arrays at the same bias condition.
Department of Defense (DoD)