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Bound-exciton-induced current bistability in a silicon light-emitting diode
- Source :
- Applied Physics Letters 82, (2003)2823-25
- Publication Year :
- 2003
-
Abstract
- A bound-exciton-induced current bistability is observed under forward bias in an efficient silicon light-emitting diode at low temperatures. Two stable states of the S-type differential conductivity correspond to empty and filled states of bound excitons, espectively. The relationship between the current-voltage characteristic and the bound-exciton population can be accounted for using a rate equation model for bound and free excitons. The consistency between the theoretical and experimental results indicates that bound excitons, despite their neutral-charged states, contribute to the current bistability in silicon p-n junction diodes.
Details
- Database :
- OAIster
- Journal :
- Applied Physics Letters 82, (2003)2823-25
- Notes :
- application/pdf, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1415619530
- Document Type :
- Electronic Resource