In situ RBS, Raman spectroscopy, and ellipsometry study of nickel-catalyzed graphitization of thin amorphous carbon films

Metal-induced crystallization (MIC) with and without layer exchange (LE) is a method to decrease the crystallization temperature of amorphous group 14 elements by up to several hundred degrees. In situ experiments are expected to provide new insights into thin film evolution and elementary process steps of MIC and to improve existing models of this type of phase transformation. In this contribution in situ Rutherford backscattering spectrometry (RBS), Raman spectroscopy and spectroscopic ellipsometry studies were performed during annealing of amorphous carbon/nickel (a-C/Ni) layer stacks at temperatures up to 750°C. LE was observed independently of the initial stacking sequence, while transformation rate and temperature differ significantly. The positions of the G, D and 2D Raman lines as well as the I(D)/I(G) ratio changed during the LE process. These were assigned in agreement with the Three-Stage-Model [1], confirming the transformation of a-C to nc-graphite. In situ RBS measurements demonstrated an opposite shift of the C- and Ni- related backscattering energies, proving that LE and graphitization occur simultaneously. [1] Ferrari et al., Phys. Rev. B 61 (2000) 14095