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Electron-doped SiGe Quantum Well Terahertz Emitters pumped by FEL pulses

Authors :
Ciano, C.
Montanari, M.
Persichetti, L.
Di Gaspare, L.
Virgilio, M.
Bagolini, L.
Capellini, G.
Zoellner, M.
Skibitzki, O.
Stark4, D.
Scalari, G.
Faist, J.
Rew, K.
Paul, D. J.
Grange, T.
Birner, S.
(0000-0003-1309-6171) Pashkin, O.
Helm, M.
Baldassarre, L.
Ortolani, M.
Seta, M.
Ciano, C.
Montanari, M.
Persichetti, L.
Di Gaspare, L.
Virgilio, M.
Bagolini, L.
Capellini, G.
Zoellner, M.
Skibitzki, O.
Stark4, D.
Scalari, G.
Faist, J.
Rew, K.
Paul, D. J.
Grange, T.
Birner, S.
(0000-0003-1309-6171) Pashkin, O.
Helm, M.
Baldassarre, L.
Ortolani, M.
Seta, M.
Source :
44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 01.-06.09.2019, Paris, France
2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), IEEE Xplore: IEEE
Publication Year :
2019

Abstract

We explore saturable absorption and terahertz photoluminescence emission in a set of n-doped Ge/SiGe asymmetric coupled quantum wells, designed as three-level systems (i.e., quantum fountain emitter). We generate a non-equilibrium population by optical pumping at the 1→3 transition energy using picosecond pulses from a free-electron laser and characterize this effect by measuring absorption as a function of the pump intensity. In the emission experiment we observe weak emission peaks in the 14-25 meV range (3-6 THz) corresponding to the two intermediate intersubband transition energies. The results represent a step towards silicon-based integrated terahertz emitters.

Details

Database :
OAIster
Journal :
44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), 01.-06.09.2019, Paris, France<br>2019 44th International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), IEEE Xplore: IEEE
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1415605263
Document Type :
Electronic Resource