Electronic Structure Simulation of Thin Silicon Layers: Impact of Orientation, Confinement, and Strain

MLA

Joseph, T., et al. “Electronic Structure Simulation of Thin Silicon Layers: Impact of Orientation, Confinement, and Strain.” Material for Advanced Metallization (MAM), 26.-29.03.2017, Dresden, Deutschland, 2017. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1415605058&authtype=sso&custid=ns315887.

APA

Joseph, T., Fuchs, F., Schuster, J., & Schulz, S. E. (2017). Electronic Structure Simulation of Thin Silicon Layers: Impact of Orientation, Confinement, and Strain. Material for Advanced Metallization (MAM), 26.-29.03.2017, Dresden, Deutschland.

Chicago

Joseph, T., F. Fuchs, J. Schuster, and S. E. Schulz. 2017. “Electronic Structure Simulation of Thin Silicon Layers: Impact of Orientation, Confinement, and Strain.” Material for Advanced Metallization (MAM), 26.-29.03.2017, Dresden, Deutschland. http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1415605058&authtype=sso&custid=ns315887.