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Thermally conductive ultra-low-k dielectric layers based on two-dimensional covalent organic frameworks

Authors :
Evans, Austin M
Evans, Austin M
Giri, Ashutosh
Sangwan, Vinod K
Xun, Sangni
Bartnof, Matthew
Torres-Castanedo, Carlos G
Balch, Halleh B
Rahn, Matthew S
Bradshaw, Nathan P
Vitaku, Edon
Burke, David W
Li, Hong
Bedzyk, Michael J
Wang, Feng
Brédas, Jean-Luc
Malen, Jonathan A
McGaughey, Alan JH
Hersam, Mark C
Dichtel, William R
Hopkins, Patrick E
Evans, Austin M
Evans, Austin M
Giri, Ashutosh
Sangwan, Vinod K
Xun, Sangni
Bartnof, Matthew
Torres-Castanedo, Carlos G
Balch, Halleh B
Rahn, Matthew S
Bradshaw, Nathan P
Vitaku, Edon
Burke, David W
Li, Hong
Bedzyk, Michael J
Wang, Feng
Brédas, Jean-Luc
Malen, Jonathan A
McGaughey, Alan JH
Hersam, Mark C
Dichtel, William R
Hopkins, Patrick E
Source :
Nature Materials; vol 20, iss 8, 1142-1148; 1476-1122
Publication Year :
2021

Abstract

As the features of microprocessors are miniaturized, low-dielectric-constant (low-k) materials are necessary to limit electronic crosstalk, charge build-up, and signal propagation delay. However, all known low-k dielectrics exhibit low thermal conductivities, which complicate heat dissipation in high-power-density chips. Two-dimensional (2D) covalent organic frameworks (COFs) combine immense permanent porosities, which lead to low dielectric permittivities, and periodic layered structures, which grant relatively high thermal conductivities. However, conventional synthetic routes produce 2D COFs that are unsuitable for the evaluation of these properties and integration into devices. Here, we report the fabrication of high-quality COF thin films, which enable thermoreflectance and impedance spectroscopy measurements. These measurements reveal that 2D COFs have high thermal conductivities (1 W m-1 K-1) with ultra-low dielectric permittivities (k = 1.6). These results show that oriented, layered 2D polymers are promising next-generation dielectric layers and that these molecularly precise materials offer tunable combinations of useful properties.

Details

Database :
OAIster
Journal :
Nature Materials; vol 20, iss 8, 1142-1148; 1476-1122
Notes :
application/pdf, Nature Materials vol 20, iss 8, 1142-1148 1476-1122
Publication Type :
Electronic Resource
Accession number :
edsoai.on1410327544
Document Type :
Electronic Resource