Reducing threading dislocation in GaSb epilayer grown on GaAs substrate for photovoltaic and thermophotovoltaic application

GaSb based photovoltaic devices have been demonstrated on recombination</a> in dislocation centers is a dominant loss mechanism in GaSb solar cell grown on GaAs substrate. Also, the band offset between AlSb/GaSb is not proper for photovoltaic application and block the photogenerated carrier to reach a contact. InGaSb strained layer was chosen as replacement of AlSb defect filtering layer. Effect of strain, thickness, and a number of InGaSb defec