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Antiferromagnetic topological insulating state in Tb0.02Bi1.08Sb0.9Te2S single crystals

Authors :
Guo, Lei
Guo, Lei
Zhao, Weiyao
Li, Qile
Xu, Meng
Chen, Lei
Bake, Abdulhakim
Vu, Thi-Hai-Yen
He, Yahua
Fang, Yong
Cortie, David
Mo, Sung-Kwan
Edmonds, Mark T
Wang, Xiaolin
Dong, Shuai
Karel, Julie
Zheng, Ren-Kui
Guo, Lei
Guo, Lei
Zhao, Weiyao
Li, Qile
Xu, Meng
Chen, Lei
Bake, Abdulhakim
Vu, Thi-Hai-Yen
He, Yahua
Fang, Yong
Cortie, David
Mo, Sung-Kwan
Edmonds, Mark T
Wang, Xiaolin
Dong, Shuai
Karel, Julie
Zheng, Ren-Kui
Source :
Physical Review B; vol 107, iss 12, 125125; 2469-9950
Publication Year :
2023

Abstract

Topological insulators are emerging materials with insulating bulk and symmetry protected nontrivial surface states. One of the most fascinating transport behaviors in a topological insulator is the quantized anomalous Hall insulator, which has been observed in magnetic-topological-insulator-based devices. In this work, we report a successful doping of rare earth element Tb into Bi1.08Sb0.9Te2S topological insulator single crystals, in which the Tb moments are antiferromagnetically ordered below ∼10 K. Benefiting from the in-bulk-gap Fermi level, transport behavior dominant by the topological surface states is observed below ∼150 K. At low temperatures, strong Shubnikov-de Haas oscillations are observed, which exhibit 2D-like behavior. The topological insulator with long range magnetic ordering in rare earth doped Bi1.08Sb0.9Te2S single crystal provides an ideal platform for quantum transport studies and potential applications.

Details

Database :
OAIster
Journal :
Physical Review B; vol 107, iss 12, 125125; 2469-9950
Notes :
application/pdf, Physical Review B vol 107, iss 12, 125125 2469-9950
Publication Type :
Electronic Resource
Accession number :
edsoai.on1401031485
Document Type :
Electronic Resource