Epitaxial lateral overgrowth of GaAsP/Si for tandem solar cell

High crystal quality GaAsP/Si fabricated by cost effective heteroepitaxial technology is promising to realize low-cost Si based tandem solar cell with efficiency higher than 30%. In this work, epitaxial lateral overgrowth (ELOG) of GaAsP/GaAs and GaAsP/GaAs/Si by hydride vapor phase epitaxy (HVPE) and their properties are studied by photoluminescence (PL) mapping. High crystal quality ELOG GaAsP/Si is obtained with enhanced PL intensity and narrow line width indicating reduced defect density provided by ELOG approach.
QC 20230622