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Improving OFF‐State Bias‐Stress Stability in High‐Mobility Conjugated Polymer Transistors with an Anti‐Solvent Treatment
Improving OFF‐State Bias‐Stress Stability in High‐Mobility Conjugated Polymer Transistors with an Anti‐Solvent Treatment
- Publication Year :
- 2023
-
Abstract
- Conjugated polymer field-effect transistors are emerging as an enabling technology for flexible electronics due to their excellent mechanical properties combined with sufficiently high charge carrier mobilities and compatibility with large-area, low-temperature processing. However, their electrical stability remains a concern. ON-state (accumulation mode) bias-stress instabilities in organic semiconductors have been widely studied, and multiple mitigation strategies have been suggested. In contrast, OFF-state (depletion mode) bias-stress instabilities remain poorly understood despite being crucial for many applications in which the transistors are held in their OFF-state for most of the time. Here, we present a simple method of using an anti-solvent treatment to achieve significant improvements in OFF-state bias-stress and environmental stability as well as general device performance for one of the best performing polymers, solution-processable indacenodithiophene-co-benzothiadiazole (IDT-BT). IDT-BT is weakly crystalline, and we attribute the notable improvements to an anti-solvent-induced, increased degree of crystallinity, resulting in a lower probability of electron trapping and the removal of charge traps. Our work highlights the importance of the microstructure in weakly crystalline polymer films and offers a simple processing strategy for achieving the reliability required for applications in flexible electronics.<br />Validerad;2023;Nivå 2;2023-07-05 (hanlid);Funder: Engineering and Physical Sciences Research Council (EP/R031894/1); EPSRC Centre for Doctoral Training (EP/L015889/1); EPSRC (EP/S030662/1)
Details
- Database :
- OAIster
- Notes :
- application/pdf, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1399553378
- Document Type :
- Electronic Resource
- Full Text :
- https://doi.org/10.1002.adma.202205377