Improved recombination lifetime of photoexcited carriers in GaAs single quantum-well heterostructures confined by GaAs/AlAs short-period superlattices

MLA

Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661, Japan, et al. Improved Recombination Lifetime of Photoexcited Carriers in GaAs Single Quantum-Well Heterostructures Confined by GaAs/AlAs Short-Period Superlattices. 2017. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1389680077&authtype=sso&custid=ns315887.

APA

Central Research Laboratory, M. E. C. A. H. 661, J., Department of Applied Physics, F. of E. N. U. N. 464, J., Department of Applied Physics, F. of E. T. U. S. 980, J., Fujiwara, K., Nakamura, A., Tokuda, Y., Nakayama, T., & Hirai, M. (2017). Improved recombination lifetime of photoexcited carriers in GaAs single quantum-well heterostructures confined by GaAs/AlAs short-period superlattices.

Chicago

Central Research Laboratory, Mitsubishi Electric Corporation, Amagasaki, Hyogo 661, Japan, Faculty of Engineering, Nagoya University, Nagoya 464, Japan Department of Applied Physics, Faculty of Engineering, Tohoku University, Sendai 980, Japan Department of Applied Physics, K Fujiwara, A Nakamura, Y Tokuda, T Nakayama, and M Hirai. 2017. “Improved Recombination Lifetime of Photoexcited Carriers in GaAs Single Quantum-Well Heterostructures Confined by GaAs/AlAs Short-Period Superlattices.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1389680077&authtype=sso&custid=ns315887.