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Influence of the beam irradiation condition with oblique incidence on crystallization of an Si film by a linearly polarized pulse laser
- Publication Year :
- 2002
-
Abstract
- type:Article<br />We investigated influence of the beam irradiation conditions with oblique incidence on crystallization of an Si film by a linearly polarized pulse laser in order to enlarge the periodic width of grain boundary. The irradiation conditions are fluence, pulse number and film thickness. We can obtain the periodic width of about 900 nm by increasing the incident angle to 25°. The experimental results suggest that the pulse number and the film thickness should be controlled properly as well as fluence in order to produce large grain stably for the oblique incidence. The detail of these conditions was discussed.<br />identifier:https://dspace.jaist.ac.jp/dspace/handle/10119/4009
Details
- Database :
- OAIster
- Notes :
- application/pdf, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1389637530
- Document Type :
- Electronic Resource