Circuit Performance Analysis of Analog RF LNA Designed with Negative Capacitance FET

In this paper, the benefits of the Negative-Capacitance FET (NCFET) in the design of a Low Noise Amplifier (LNA) are assessed. The effect of gain enhancement due to the Ferroelectric (Fe) layer on the performance of a common-source (CS) LNA is analytically modeled for NCFETs with 14 nm FinFET as the base technology. Simulations show a high gain for the NCFET-based LNA. Such performance in conjunction with the integrability with CMOS technology indicates the potential of NCFET for analog/RF design.