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Electrical Control of Uniformity in Quantum Dot Devices

Authors :
Meyer, M. (author)
Déprez, C.C. (author)
van Abswoude, Timo R. (author)
Meijer, Ilja N. (author)
Liu, Dingshan (author)
Wang, C.A. (author)
Karwal, S. (author)
Oosterhout, S.D. (author)
Borsoi, F. (author)
Sammak, A. (author)
Hendrickx, N.W. (author)
Scappucci, G. (author)
Veldhorst, M. (author)
Meyer, M. (author)
Déprez, C.C. (author)
van Abswoude, Timo R. (author)
Meijer, Ilja N. (author)
Liu, Dingshan (author)
Wang, C.A. (author)
Karwal, S. (author)
Oosterhout, S.D. (author)
Borsoi, F. (author)
Sammak, A. (author)
Hendrickx, N.W. (author)
Scappucci, G. (author)
Veldhorst, M. (author)
Publication Year :
2023

Abstract

Highly uniform quantum systems are essential for the practical implementation of scalable quantum processors. While quantum dot spin qubits based on semiconductor technology are a promising platform for large-scale quantum computing, their small size makes them particularly sensitive to their local environment. Here, we present a method to electrically obtain a high degree of uniformity in the intrinsic potential landscape using hysteretic shifts of the gate voltage characteristics. We demonstrate the tuning of pinch-off voltages in quantum dot devices over hundreds of millivolts that then remain stable at least for hours. Applying our method, we homogenize the pinch-off voltages of the plunger gates in a linear array for four quantum dots, reducing the spread in pinch-off voltages by one order of magnitude. This work provides a new tool for the tuning of quantum dot devices and offers new perspectives for the implementation of scalable spin qubit arrays.<br />QCD/Veldhorst Lab<br />BUS/TNO STAFF<br />QCD/Scappucci Lab<br />QN/Veldhorst Lab

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1379328106
Document Type :
Electronic Resource
Full Text :
https://doi.org/10.1021.acs.nanolett.2c04446