A device for improving the mobility of carriers in a mosfet channel on silicon carbide

A device for improving the mobility of carriers in a mosfet channel on silicon carbide 5 arranged on a substrate 10 comprising first and second heavily-doped strips 11 and 14 respectively covered by first and second contacts 13 and 15, these two strips being spaced apart by a channel 18 that also appears on 10 the substrate 10, the channel being covered by a dielectric channel 20, itself surmounted by a third contact 21. Incorporated a thin film 19 lightly doped with dopant 15 atoms of a same type as the channel, at the interface with the dielectric layer 20, the dopant atoms being distributed on both sides of the interface.