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Dose Rate Considerations for Semiconductor Electronics: Why Current Variations Enable Unique GaN-based Transmission Electron Microscopy

Authors :
Specht, P
Specht, P
Kirste, R
Sitar, Z
Anderson, T
Koehler, A
Kisielowski, C
Specht, P
Specht, P
Kirste, R
Sitar, Z
Anderson, T
Koehler, A
Kisielowski, C
Source :
Microscopy and Microanalysis; vol 26, iss S2, 3064-3066; 1431-9276
Publication Year :
2020

Details

Database :
OAIster
Journal :
Microscopy and Microanalysis; vol 26, iss S2, 3064-3066; 1431-9276
Notes :
application/pdf, Microscopy and Microanalysis vol 26, iss S2, 3064-3066 1431-9276
Publication Type :
Electronic Resource
Accession number :
edsoai.on1367477597
Document Type :
Electronic Resource