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Unconventional excitonic states with phonon sidebands in layered silicon diphosphide.

Authors :
Zhou, Ling
Zhou, Ling
Huang, Junwei
Windgaetter, Lukas
Ong, Chin Shen
Zhao, Xiaoxu
Zhang, Caorong
Tang, Ming
Li, Zeya
Qiu, Caiyu
Latini, Simone
Lu, Yangfan
Wu, Di
Gou, Huiyang
Wee, Andrew TS
Hosono, Hideo
Louie, Steven G
Tang, Peizhe
Rubio, Angel
Yuan, Hongtao
Zhou, Ling
Zhou, Ling
Huang, Junwei
Windgaetter, Lukas
Ong, Chin Shen
Zhao, Xiaoxu
Zhang, Caorong
Tang, Ming
Li, Zeya
Qiu, Caiyu
Latini, Simone
Lu, Yangfan
Wu, Di
Gou, Huiyang
Wee, Andrew TS
Hosono, Hideo
Louie, Steven G
Tang, Peizhe
Rubio, Angel
Yuan, Hongtao
Source :
Nature materials; vol 21, iss 7, 773-778; 1476-1122
Publication Year :
2022

Abstract

Complex correlated states emerging from many-body interactions between quasiparticles (electrons, excitons and phonons) are at the core of condensed matter physics and material science. In low-dimensional materials, quantum confinement affects the electronic, and subsequently, optical properties for these correlated states. Here, by combining photoluminescence, optical reflection measurements and ab initio theoretical calculations, we demonstrate an unconventional excitonic state and its bound phonon sideband in layered silicon diphosphide (SiP2), where the bound electron-hole pair is composed of electrons confined within one-dimensional phosphorus-phosphorus chains and holes extended in two-dimensional SiP2 layers. The excitonic state and emergent phonon sideband show linear dichroism and large energy redshifts with increasing temperature. Our ab initio many-body calculations confirm that the observed phonon sideband results from the correlated interaction between excitons and optical phonons. With these results, we propose layered SiP2 as a platform for the study of excitonic physics and many-particle effects.

Details

Database :
OAIster
Journal :
Nature materials; vol 21, iss 7, 773-778; 1476-1122
Notes :
application/pdf, Nature materials vol 21, iss 7, 773-778 1476-1122
Publication Type :
Electronic Resource
Accession number :
edsoai.on1367389084
Document Type :
Electronic Resource