Managing Green Emission in Coupled InGaN QW-QDs Nanostructures via Nanoengineering

By utilizing and designing coupled InGaN QW-QDs nanostructures as active layer, we show a demonstration of significant enhancement of green emission in the hybrid nanostructure with a 4.5 nm GaN barrier layer at high temperatures. Such enhancement is ascribed to temperature-dependent phonon-assisted tunneling of excitons from QW to QDs and suppression of nonradiative recombination of excitons localized in the QDs layer in the sample with a 4.5 nm barrier layer. This study shall be useful for optimization design of high-efficiency InGaN-based green LEDs and also could shed some light on the complicated internal luminescence mechanisms in InGaN QW-QDs hybrid nanostructures.