Impacts of the Lattice Strain on Perovskite Light-Emitting Diodes

The development of perovskite light-emitting diodes (PeLEDs) with both high efficiency and excellent stability remains challenging. Herein, a strong correlation between the lattice strain in perovskite films and the stability of resulting PeLEDs is revealed. Based on high-efficiency PeLEDs, the device lifetime is optimized by rationally tailoring the lattice strain in perovskite films. A PeLED with a high peak external quantum efficiency of 18.2% and a long lifetime of 151 h (T-70, under a current density of 20 mA cm(-2)) is realized with a minimized lattice strain in the perovskite film. In addition, an increase in the lattice strain is found during the long-time device stability test, indicating that the degradation of the local perovskite lattice structure could be one of the degradation mechanisms for long-term stable PeLEDs.
Funding Agencies|ERC Starting Grant [717026]; Swedish Foundation for International Cooperation in Research and Higher Education [CH2018-7736]; Swedish Government Strategic Research Area in Materials Science on Functional Materials at Linkoping University (Faculty Grant SFO-Mat-LiU) [2009-00971]; European Union [823717 - ESTEEM3]; [895679]