A STUDY FOCUSING ON THE EFFECTS OF HTOL STRESS ON THE LUMINESCENCE SPECTRUM OF GAN DIODES TO CHARACTERIZE COMPONENT DEGRADATION

Wide bandgap (WBG) semiconductor technology allows devices to be operated at higher voltages, currents, temperatures, and frequencies than does conventional silicon-based narrow bandgap semiconductors. These characteristics are advantageous to military applications, such as uses in power converters, weapons, and radar systems. Notably, WBG semiconductors have advantages where cooling and space availability for components are concerns, such as unmanned underwater platforms. The ability to monitor the health and performance of these devices passively and remotely would reduce the man-hours required for preventative maintenance; it would also reduce the needs for invasive troubleshooting and needless component replacement. This thesis demonstrates the abilities to measure and analyze the electroluminescence spectrum of WBG devices using a custom-built high-temperature operating life (HTOL) test setup incorporating the ability to sample light spectroscopy.
Lieutenant, United States Navy
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