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Origin of the Flat Band in Heavily Cs-Doped Graphene

Authors :
Ehlen, N
Hell, M
Marini, G
Hasdeo, Eddwi Hesky
Saito, R
Falke, Y
Goerbig, M O
Di Santo, G
Petaccia, L
Profeta, G
Gruneis, A
Ehlen, N
Hell, M
Marini, G
Hasdeo, Eddwi Hesky
Saito, R
Falke, Y
Goerbig, M O
Di Santo, G
Petaccia, L
Profeta, G
Gruneis, A
Publication Year :
2020

Abstract

A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we show that the flat band in graphene can be achieved by sandwiching a graphene monolayer by two cesium (Cs) layers. We investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculations. Our work highlights that charge transfer, zone folding of graphene bands, and the covalent bonding between C and Cs atoms are the origin of the flat energy band formation. Analysis of the Stoner criterion for the flat band suggests the presence of a ferromagnetic instability. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas.

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1350513784
Document Type :
Electronic Resource