Cite
Recent Development in Flourine-ion-implanted GaN-based Heterojunction Power Devices
MLA
Chen, Kevin Jing ECE, et al. Recent Development in Flourine-Ion-Implanted GaN-Based Heterojunction Power Devices. 2013. EBSCOhost, widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1331231869&authtype=sso&custid=ns315887.
APA
Chen, K. J. E., Kwan, M. H., & Tang, Z. (2013). Recent Development in Flourine-ion-implanted GaN-based Heterojunction Power Devices.
Chicago
Chen, Kevin Jing ECE, Man Ho Kwan, and Zhikai Tang. 2013. “Recent Development in Flourine-Ion-Implanted GaN-Based Heterojunction Power Devices.” http://widgets.ebscohost.com/prod/customlink/proxify/proxify.php?count=1&encode=0&proxy=&find_1=&replace_1=&target=https://search.ebscohost.com/login.aspx?direct=true&site=eds-live&scope=site&db=edsoai&AN=edsoai.on1331231869&authtype=sso&custid=ns315887.