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Drain voltage sweeping-induced degradation in n-type low-temperature polysilicon thin film transistors

Drain voltage sweeping-induced degradation in n-type low-temperature polysilicon thin film transistors

Authors :
Zhou, Dapeng
Wang, Mingxiang
Hao, Han
Zhang, Dongli
Wong, Man
Zhou, Dapeng
Wang, Mingxiang
Hao, Han
Zhang, Dongli
Wong, Man
Publication Year :
2010

Abstract

Device degradation under the drain voltage (V-d) sweeping, where V-d lineally sweeps at a fixed gate voltage, has been investigated for n-type low-temperature (LT) polysilicon thin film transistors (TFTs). The degradation mechanism is found to be related to the dc hot carrier (HC) effect even for a sweeping time as short as similar to mu s. Since a routine device output measurement can induce significant (as large as 30\%) on-current (I-on) degradation in such LT crystallized TFTs, only by using the optimized pulse IV method can one obtain an accurate output measurement without much affecting the device under test (e.g., < 0.5\% of I-on degradation).

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1331204169
Document Type :
Electronic Resource