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Drain voltage sweeping-induced degradation in n-type low-temperature polysilicon thin film transistors
Drain voltage sweeping-induced degradation in n-type low-temperature polysilicon thin film transistors
- Publication Year :
- 2010
-
Abstract
- Device degradation under the drain voltage (V-d) sweeping, where V-d lineally sweeps at a fixed gate voltage, has been investigated for n-type low-temperature (LT) polysilicon thin film transistors (TFTs). The degradation mechanism is found to be related to the dc hot carrier (HC) effect even for a sweeping time as short as similar to mu s. Since a routine device output measurement can induce significant (as large as 30\%) on-current (I-on) degradation in such LT crystallized TFTs, only by using the optimized pulse IV method can one obtain an accurate output measurement without much affecting the device under test (e.g., < 0.5\% of I-on degradation).
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1331204169
- Document Type :
- Electronic Resource