Growth and visible photoluminescence of highly oriented (100) zinc oxide film synthesized on silicon by plasma immersion ion implantation

High-quality (100) ZnO films with smooth surface topography have been synthesized on Si substrate by plasma immersion ion implantation. The materials exhibit compressive stress because of room temperature growth. After annealing at different temperatures, various visible photoluminescence bands are observed. The optical phenomenon as well as the transition mechanism which may involve defects such as [Zn-1], [V-Zn], and [O-i(-)] induced by the high substrate bias are discussed in this paper. (C) 2004 Elsevier Ltd. All rights reserved.