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Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate
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Abstract
- The optical properties of hexagonal GaN microdisk arrays grown on sapphire substrates by selective area growth (SAG) technique were investigated both experimentally and theoretically. Whispering-gallery-mode (WGM) lasing is observed from various directions of the GaN pyramids collected at room temperature, with the dominant lasing mode being Transverse-Electric (TE) polarized. A relaxation of compressive strain in the lateral overgrown region of the GaN microdisk is illustrated by photoluminescence (PL) mapping and Raman spectroscopy. A strong correlation between the crystalline quality and lasing behavior of the GaN microdisks was also demonstrated.
Details
- Database :
- OAIster
- Notes :
- application/pdf, Jiang, Jie’an and Xu, Houqiang and Sheikhi, Moheb and Li, Liang and Yang, Zhenhai and Hoo, Jason and Guo, Shiping and Zeng, Yuheng and Guo, Wei and Ye, Jichun (2019) Omnidirectional whispering-gallery-mode lasing in GaN microdisk obtained by selective area growth on sapphire substrate. Optics Express, 27 (11). pp. 16195-16205. ISSN 1094-4087, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1312914262
- Document Type :
- Electronic Resource
- Full Text :
- https://doi.org/10.1364.OE.27.016195