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Stacking fault analysis of epitaxial 3C-SiC on Si(001) ridges
- Publication Year :
- 2016
-
Abstract
- The stacking faults (SFs) in 3C-SiC epitaxially grown on ridges deeply etched into Si(001) substrates offcut towards [110] were quantitatively analyzed by electron microscopy and X-ray diffraction. A significant reduction of SF density with respect to planar material was observed for the {111} planes parallel to the ridges. The highest SF density was found in the (-1-11) plane. A previously observed defect was identified as twins by electron backscatter diffraction.
Details
- Database :
- OAIster
- Notes :
- English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1311397631
- Document Type :
- Electronic Resource