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Organic metal-semiconductor field effect transistor (OMESFET) made on a rubrene single crystal

Authors :
Braga, D
Campione, M
Borghesi, A
Horowitz, G
CAMPIONE, MARCELLO
BORGHESI, ALESSANDRO
Horowitz, G.
Braga, D
Campione, M
Borghesi, A
Horowitz, G
CAMPIONE, MARCELLO
BORGHESI, ALESSANDRO
Horowitz, G.
Publication Year :
2010

Abstract

Organic metal-semiconductor transistors, where the gate consists of a low-workfunction metal directly deposited on the semiconductor, are fabricated on rubrene single crystals (see figure). A careful analysis of the current-voltage characteristics and impedance spectroscopy of the corresponding diode leads to the conclusion that the current in the transistor is controlled by a modulation of charge injection from the source electrode. (Figure Presented) © 2010 WILEY-VCH Verlag GmbH & Co. KGaA.

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1308893377
Document Type :
Electronic Resource