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Single-exciton gain and stimulated emission across the infrared telecom band from robust heavily doped PbS colloidal quantum dots
- Publication Year :
- 2020
-
Abstract
- Materials with optical gain in the infrared are of paramount importance for optical communications, medical diagnostics, and silicon photonics. The current technology is based either on costly III-V semiconductors that are not monolithic to silicon CMOS technology or Er-doped fiber technology that does not make use of the full fiber transparency window. Colloidal quantum dots (CQDs) offer a unique opportunity as an optical gain medium in view of their tunable bandgap, solution processability, and CMOS compatibility. The 8-fold degeneracy of infrared CQDs based on Pb-chalcogenides has hindered the demonstration of low-threshold optical gain and lasing, at room temperature. We demonstrate room-temperature, infrared, size-tunable, band-edge stimulated emission with a line width of ~14 meV. Leveraging robust electronic doping and charge-exciton interactions in PbS CQD thin films, we reach a gain threshold at the single exciton regime representing a 4-fold reduction from the theoretical limit of an 8-fold degenerate system, with a net modal gain in excess of 100 cm-1.<br />The authors acknowledge financial support from the European Research Council (ERC) under the European Union’s Horizon 2020 research and innovation program (grant agreement no. 725165), the Spanish Ministry of Economy and Competitiveness (MINECO), and the ‘Fondo Europeo de Desarrollo Regional’ (FEDER) through grant TEC2017- 88655-R. The authors also acknowledge financial support from Fundacio Privada Cellex, the program CERCA, and from the Spanish Ministry of Economy and Competitiveness through the “Severo Ochoa” Programme for Centres of Excellence in R&D (SEV-2015-0522). S.C. acknowledges support from a Marie Curie Standard European Fellowship (NAROBAND, H2020-MSCA-IF-2016-750600). I.R. acknowledges support from the Ministerio de Economiá , Industria y Competitividad of Spain via a Juan de la Cierva fellowship. We are also thankful to Dr. Kaifen Wu for fruitful discussions.<br />Peer Reviewed<br />Postprint (published version)
Details
- Database :
- OAIster
- Notes :
- 7 p., application/pdf, English
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1298717216
- Document Type :
- Electronic Resource