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Proton Implantation and Rapid Thermal Annealing Effects on GaAs/A1GaAs Quantum Well Infrared Photodetectors
- Source :
- Superlattices and Microstructures
- Publication Year :
- 1999
-
Abstract
- We report the use of intermixing techniques to modify GaAs/AlGaAs multiple quantum wells (MQWs). A large shift in the response wavelength of the GaAs/AlGaAs MQW-based infrared photodetector is obtained by proton implantation and then a standard annealing
Details
- Database :
- OAIster
- Journal :
- Superlattices and Microstructures
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1291821034
- Document Type :
- Electronic Resource