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Structural Changes in Ultra-High-Dose Self-Implanted Crystalline and Amorphous Silicon
- Source :
- Nuclear Instruments and Methods in Physics Research: Section B
- Publication Year :
- 1999
-
Abstract
- Ultra-high-dose Si ion implantation (1×1018 cm-2) into both amorphous and crystalline Si has been studied as a function of implantation temperature from liquid nitrogen to 250°C. The samples were analysed before and after 600°C annealing by Rutherford
Details
- Database :
- OAIster
- Journal :
- Nuclear Instruments and Methods in Physics Research: Section B
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1291820585
- Document Type :
- Electronic Resource