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Enhancement of the Etch Rate of CVD Diamond by Prior C and Ge Implantation
- Source :
- Diamond and Related Materials
- Publication Year :
- 2002
-
Abstract
- Polycrystalline diamond films have been irradiated with C+ or Ge+ ions at doses in the range 5 × 1013-5 × 1015 ions/cm2. Analysis of the implanted surfaces by Raman spectroscopy has shown that the proportion of non-diamond or amorphous carbon increased
Details
- Database :
- OAIster
- Journal :
- Diamond and Related Materials
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1291818584
- Document Type :
- Electronic Resource