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Quantitative dopant distributions in GaAs nanowires using atom probe tomography
- Source :
- Ultramicroscopy
- Publication Year :
- 2013
-
Abstract
- Controllable doping of semiconductor nanowires is critical to realize their proposed applications, however precise and reliable characterization of dopant distributions remains challenging. In this article, we demonstrate an atomic-resolution three-dimens
Details
- Database :
- OAIster
- Journal :
- Ultramicroscopy
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1291802244
- Document Type :
- Electronic Resource