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Analysis of island dynamics in epitaxial growth of thin films

Authors :
Caflisch, Russel E
Caflisch, Russel E
Li, B
Caflisch, Russel E
Caflisch, Russel E
Li, B
Source :
Multiscale Modeling & Simulation; vol 1, iss 1, 150-171; 1540-3459
Publication Year :
2003

Abstract

This work is concerned with analysis and refinement for a class of island dynamics models for epitaxial growth of crystalline thin films. An island dynamics model consists of evolution equations for step edges (or island boundaries), coupled with a diffusion equation for the adatom density, on an epitaxial surface. The island dynamics model with irreversible aggregation is confirmed to be mathematically ill-posed, with a growth rate that is approximately linear for large wavenumbers. By including a kinetic model for the structure and evolution of step edges, the island dynamics model is made mathematically well-posed. In the limit of small edge Peclet number, the edge kinetics model reduces to a set of boundary conditions, involving line tension and one-dimensional surface diffusion, for the adatom density. Finally, in the infinitely fast terrace diffusion limit, a simplified model of one-dimensional surface diffusion and kink convection is derived and found to be linearly stable.

Details

Database :
OAIster
Journal :
Multiscale Modeling & Simulation; vol 1, iss 1, 150-171; 1540-3459
Notes :
application/pdf, Multiscale Modeling & Simulation vol 1, iss 1, 150-171 1540-3459
Publication Type :
Electronic Resource
Accession number :
edsoai.on1287574585
Document Type :
Electronic Resource