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Spin-Orbit-Torque Switching Mediated by an Antiferromagnetic Insulator

Authors :
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Wang, Hailong
Finley, Joseph
Zhang, Pengxiang
Han, Jiahao
Hou, Justin T
Liu, Luqiao
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Wang, Hailong
Finley, Joseph
Zhang, Pengxiang
Han, Jiahao
Hou, Justin T
Liu, Luqiao
Source :
APS
Publication Year :
2021

Abstract

© 2019 American Physical Society. We report the observation of antiferromagnetic insulator-mediated spin-orbit-torque switching in Pt/NiO/Co1-xTbx heterostructures. By measuring the current-induced shift in the magnetic hysteresis loops and the second-harmonic anomalous Hall resistance, we quantitatively determine the spin-orbit-torque efficiency in Pt/NiO/Co1-xTbx samples with different NiO thicknesses, uncovering a systematic evolution of the magnetic switching behavior. The measured spin-orbit-torque efficiency is enhanced in the low NiO thickness regime (1-2 nm), highlighting the efficient spin manipulation across a disordered antiferromagnetic insulator.

Details

Database :
OAIster
Journal :
APS
Notes :
application/pdf, English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1286404745
Document Type :
Electronic Resource