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Mott localization in the van der Waals crystal CrI3: A GGA+DMFT study
- Source :
- Physical Review B; vol 102, iss 19, 195130; 2469-9950
- Publication Year :
- 2020
-
Abstract
- Using the generalized gradient approximation plus dynamical mean-field theory (GGA+DMFT) we confirm the importance of multi-orbital dynamical correlations in determining the paramagnetic insulating state of CrI3. While the ferromagnetic phase reveals weak electronic correlation effects due to strong spin-orbital polarization, the Mott insulating state of paramagnetic CrI3 crystal is shown to be driven by the interplay between orbital-dependent one-electron lineshape and multi-orbital electronic interactions. To probe the paramagnetic Mott insulating state we performed x-ray absorption spectroscopy (XAS) measurements for the two structural phases of CrI3. Our study is relevant to understanding the orbital-selective electronic structure reconstruction of Mott insulators and should be applicable to other van der Waals bonded materials from bulk to the ultrathin limit.
Details
- Database :
- OAIster
- Journal :
- Physical Review B; vol 102, iss 19, 195130; 2469-9950
- Notes :
- application/pdf, Physical Review B vol 102, iss 19, 195130 2469-9950
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1277077393
- Document Type :
- Electronic Resource