Back to Search Start Over

Mott localization in the van der Waals crystal CrI3: A GGA+DMFT study

Authors :
Craco, L
Craco, L
Carara, SS
Shao, YC
Chuang, YD
Freelon, B
Craco, L
Craco, L
Carara, SS
Shao, YC
Chuang, YD
Freelon, B
Source :
Physical Review B; vol 102, iss 19, 195130; 2469-9950
Publication Year :
2020

Abstract

Using the generalized gradient approximation plus dynamical mean-field theory (GGA+DMFT) we confirm the importance of multi-orbital dynamical correlations in determining the paramagnetic insulating state of CrI3. While the ferromagnetic phase reveals weak electronic correlation effects due to strong spin-orbital polarization, the Mott insulating state of paramagnetic CrI3 crystal is shown to be driven by the interplay between orbital-dependent one-electron lineshape and multi-orbital electronic interactions. To probe the paramagnetic Mott insulating state we performed x-ray absorption spectroscopy (XAS) measurements for the two structural phases of CrI3. Our study is relevant to understanding the orbital-selective electronic structure reconstruction of Mott insulators and should be applicable to other van der Waals bonded materials from bulk to the ultrathin limit.

Details

Database :
OAIster
Journal :
Physical Review B; vol 102, iss 19, 195130; 2469-9950
Notes :
application/pdf, Physical Review B vol 102, iss 19, 195130 2469-9950
Publication Type :
Electronic Resource
Accession number :
edsoai.on1277077393
Document Type :
Electronic Resource