Hot carrier effect and oxide reliability of T-FinFET devices

Hot-carrier effect and oxide reliability of CMOS T-FinFET with 2.1nm-thick gate-SiO2 were investigated. It was found that hot-carrier immunity improves as the T-FinFET fin width (body thickness) decreases, which facilitates gate-length scaling, while it is degraded at elevated temperature due to the self-heating effect. High values of QBD are achieved for devices with very small gate area. A post-fin-etch hydrogen anneal is helpful for improving hot-carrier immunity and QBD. © 2018 by TechConnect. All rights reserved.