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Sharp chemical interface in epitaxial Fe3O4 thin films

Authors :
Ministerio de Economía y Competitividad (España)
Consejo Superior de Investigaciones Científicas (España)
Gálvez, S.
Rubio-Zuazo, J.
Salas, Eduardo
Muñoz-Noval, A.
Castro, Germán R.
Ministerio de Economía y Competitividad (España)
Consejo Superior de Investigaciones Científicas (España)
Gálvez, S.
Rubio-Zuazo, J.
Salas, Eduardo
Muñoz-Noval, A.
Castro, Germán R.
Publication Year :
2014

Abstract

Chemically sharp interface was obtained on single phase single oriented Fe3O4 (001) thin film (7 nm) grown on NiO (001) substrate using oxygen assisted molecular beam epitaxy. Refinement of the atomic structure, stoichiometry, and oxygen vacancies were determined by soft and hard x-ray photoelectron spectroscopy, low energy electron diffraction and synchrotron based X-ray reflectivity, and X-ray diffraction. Our results demonstrate an epitaxial growth of the magnetite layer, perfect iron stoichiometry, absence of oxygen vacancies, and the existence of an intermixing free interface. Consistent magnetic and electrical characterizations are also shown.

Details

Database :
OAIster
Notes :
English
Publication Type :
Electronic Resource
Accession number :
edsoai.on1257718396
Document Type :
Electronic Resource