Back to Search
Start Over
A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor
- Source :
- Prof. del Alamo via Phoebe Ayers
- Publication Year :
- 2020
-
Abstract
- A p-type Diamond:H/WO 3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO 2 as gate insulator, the Diamond:H/WO 3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO 3 -thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO 3 layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication.
Details
- Database :
- OAIster
- Journal :
- Prof. del Alamo via Phoebe Ayers
- Notes :
- application/pdf
- Publication Type :
- Electronic Resource
- Accession number :
- edsoai.on1239994524
- Document Type :
- Electronic Resource